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Ding, Yi, Hu, Jian-Guo, Qin, Jun-Rui, Tan, Hong-Zhou (2015) Effect of body biasing on single-event induced charge collection in deep N-well technology. Chinese Physics B, 24. 79401pp. doi:10.1088/1674-1056/24/7/079401

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Reference TypeJournal (article/letter/editorial)
TitleEffect of body biasing on single-event induced charge collection in deep N-well technology
JournalChinese Physics B
AuthorsDing, YiAuthor
Hu, Jian-GuoAuthor
Qin, Jun-RuiAuthor
Tan, Hong-ZhouAuthor
Year2015 (July)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/7/079401Search in ResearchGate
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Mindat Ref. ID6006422Long-form Identifiermindat:1:5:6006422:8
GUID0
Full ReferenceDing, Yi, Hu, Jian-Guo, Qin, Jun-Rui, Tan, Hong-Zhou (2015) Effect of body biasing on single-event induced charge collection in deep N-well technology. Chinese Physics B, 24. 79401pp. doi:10.1088/1674-1056/24/7/079401
Plain TextDing, Yi, Hu, Jian-Guo, Qin, Jun-Rui, Tan, Hong-Zhou (2015) Effect of body biasing on single-event induced charge collection in deep N-well technology. Chinese Physics B, 24. 79401pp. doi:10.1088/1674-1056/24/7/079401
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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