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Wang, Xiao-Ping, Chen, Min, Shen, Yi (2015) Switching mechanism for TiO 2 memristor and quantitative analysis of exponential model parameters. Chinese Physics B, 24. 88401pp. doi:10.1088/1674-1056/24/8/088401

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Reference TypeJournal (article/letter/editorial)
TitleSwitching mechanism for TiO 2 memristor and quantitative analysis of exponential model parameters
JournalChinese Physics B
AuthorsWang, Xiao-PingAuthor
Chen, MinAuthor
Shen, YiAuthor
Year2015 (August)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/8/088401Search in ResearchGate
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Mindat Ref. ID6006514Long-form Identifiermindat:1:5:6006514:8
GUID0
Full ReferenceWang, Xiao-Ping, Chen, Min, Shen, Yi (2015) Switching mechanism for TiO 2 memristor and quantitative analysis of exponential model parameters. Chinese Physics B, 24. 88401pp. doi:10.1088/1674-1056/24/8/088401
Plain TextWang, Xiao-Ping, Chen, Min, Shen, Yi (2015) Switching mechanism for TiO 2 memristor and quantitative analysis of exponential model parameters. Chinese Physics B, 24. 88401pp. doi:10.1088/1674-1056/24/8/088401
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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