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Ma, Li, Shen, Guang-Di, Gao, Zhi-Yuan, Xu, Chen (2015) Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers. Chinese Physics B, 24. 97202pp. doi:10.1088/1674-1056/24/9/097202

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Reference TypeJournal (article/letter/editorial)
TitleEnhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers
JournalChinese Physics B
AuthorsMa, LiAuthor
Shen, Guang-DiAuthor
Gao, Zhi-YuanAuthor
Xu, ChenAuthor
Year2015 (September)Volume24
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/24/9/097202Search in ResearchGate
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Mindat Ref. ID6006601Long-form Identifiermindat:1:5:6006601:3
GUID0
Full ReferenceMa, Li, Shen, Guang-Di, Gao, Zhi-Yuan, Xu, Chen (2015) Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers. Chinese Physics B, 24. 97202pp. doi:10.1088/1674-1056/24/9/097202
Plain TextMa, Li, Shen, Guang-Di, Gao, Zhi-Yuan, Xu, Chen (2015) Enhanced performances of AlGaInP-based light-emitting diodes with Schottky current blocking layers. Chinese Physics B, 24. 97202pp. doi:10.1088/1674-1056/24/9/097202
In(n.d.) Chinese Physics B Vol. 24. IOP Publishing

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