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Mahmoudi, Mohsen, Ahangari, Zahra, Fathipour, Morteza (2016) Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap. Chinese Physics B, 25. 18501pp. doi:10.1088/1674-1056/25/1/018501

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Reference TypeJournal (article/letter/editorial)
TitleImproved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap
JournalChinese Physics B
AuthorsMahmoudi, MohsenAuthor
Ahangari, ZahraAuthor
Fathipour, MortezaAuthor
Year2016 (January)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/1/018501Search in ResearchGate
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Mindat Ref. ID6006722Long-form Identifiermindat:1:5:6006722:5
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Full ReferenceMahmoudi, Mohsen, Ahangari, Zahra, Fathipour, Morteza (2016) Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap. Chinese Physics B, 25. 18501pp. doi:10.1088/1674-1056/25/1/018501
Plain TextMahmoudi, Mohsen, Ahangari, Zahra, Fathipour, Morteza (2016) Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap. Chinese Physics B, 25. 18501pp. doi:10.1088/1674-1056/25/1/018501
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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Li, Cong, Zhuang, Yi-Qi, Zhang, Li, Jin, Gang (2014) Quasi-two-dimensional threshold voltage model for junctionless cylindrical surrounding gate metal-oxide-semiconductor field-effect transistor with dual-material gate. Chinese Physics B, 23. 18501pp. doi:10.1088/1674-1056/23/1/018501
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Ahmadi Fouladi, A (2017) Quantum transport through a Z-shaped silicene nanoribbon. Chinese Physics B, 26. 47304pp. doi:10.1088/1674-1056/26/4/047304
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