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Tan, Tingting, Guo, Tingting, Wu, Zhihui, Liu, Zhengtang (2016) Charge transport and bipolar switching mechanism in a Cu/HfO 2 /Pt resistive switching cell. Chinese Physics B, 25. 117306pp. doi:10.1088/1674-1056/25/11/117306

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Reference TypeJournal (article/letter/editorial)
TitleCharge transport and bipolar switching mechanism in a Cu/HfO 2 /Pt resistive switching cell
JournalChinese Physics B
AuthorsTan, TingtingAuthor
Guo, TingtingAuthor
Wu, ZhihuiAuthor
Liu, ZhengtangAuthor
Year2016 (November)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/11/117306Search in ResearchGate
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Mindat Ref. ID6006890Long-form Identifiermindat:1:5:6006890:5
GUID0
Full ReferenceTan, Tingting, Guo, Tingting, Wu, Zhihui, Liu, Zhengtang (2016) Charge transport and bipolar switching mechanism in a Cu/HfO 2 /Pt resistive switching cell. Chinese Physics B, 25. 117306pp. doi:10.1088/1674-1056/25/11/117306
Plain TextTan, Tingting, Guo, Tingting, Wu, Zhihui, Liu, Zhengtang (2016) Charge transport and bipolar switching mechanism in a Cu/HfO 2 /Pt resistive switching cell. Chinese Physics B, 25. 117306pp. doi:10.1088/1674-1056/25/11/117306
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

See Also

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Guo, Tingting, Tan, Tingting, Liu, Zhengtang, Wu, Zhihui (2016) Transition of resistive switching behavior for a HfOx film induced by Ni doping. RSC Advances, 6 (42). 35740-35745 doi:10.1039/c6ra03688k
Guo, Tingting, Tan, Tingting, Liu, Zhengtang (2015) Role of deposition temperature on performance of HfO x -based resistive switching. Applied Physics A, 120. 121-125 doi:10.1007/s00339-015-9178-0
Guo, Tingting, Tan, Tingting, Liu, Zhengtang (2016) Resistive switching behavior of HfO2film with different Ti doping concentrations. Journal of Physics D: Applied Physics, 49. 45103pp. doi:10.1088/0022-3727/49/4/045103
Guo, Tingting, Tan, Tingting, Liu, Zhengtang (2015) The effect of Cu doping concentration on resistive switching of HfO2 film. Applied Surface Science, 351. 704-708 doi:10.1016/j.apsusc.2015.05.176
Guo, Tingting, Tan, Tingting, Liu, Zhengtang (2015) The improved resistive switching of HfO2:Cu film with multilevel storage. Journal of Materials Science, 50. 7043-7047 doi:10.1007/s10853-015-9257-9
Guo, Tingting, Tan, Tingting, Liu, Zhengtang, Liu, Bangjie (2016) Oxygen vacancy modulation and enhanced switching behavior in HfO x film induced by Al doping effect. Journal of Alloys and Compounds, 686. 669-674 doi:10.1016/j.jallcom.2016.06.090
Tan, Tingting, Guo, Tingting, Liu, Zhengtang (2014) Au doping effects in HfO2-based resistive switching memory. Journal of Alloys and Compounds, 610. 388-391 doi:10.1016/j.jallcom.2014.05.046
Huang 黄, Xianglin 香林, Wang 王, Ying 英, Huang 黄, Huixiang 慧香, Duan 段, Li 理, Guo 郭, Tingting 婷婷 (2024) Resistive switching behavior and mechanism of HfO x films with large on/off ratio by structure design. Chinese Physics B, 33 (1) 17303 doi:10.1088/1674-1056/ad053a
Guo, Tingting, Tan, Tingting, Liu, Zhengtang, Liu, Bangjie (2017) Effects of Al dopants and interfacial layer on resistive switching behaviors of HfOx film. Journal of Alloys and Compounds, 708. 23-28 doi:10.1016/j.jallcom.2017.02.286
Ma, Han-Lu, Wang, Zhong-Qiang, Xu, Hai-Yang, Zhang, Lei, Zhao, Xiao-Ning, Han, Man-Shu, Ma, Jian-Gang, Liu, Yi-Chun (2016) Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments. Chinese Physics B, 25. 127303pp. doi:10.1088/1674-1056/25/12/127303
Deng, Ning, Pang, Hua, Wu, Wei (2014) Effects of different dopants on switching behavior of HfO 2 -based resistive random access memory. Chinese Physics B, 23. 107306pp. doi:10.1088/1674-1056/23/10/107306
 
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