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Liang, Feng, Chen, Ping, Zhao, De-Gang, Jiang, De-Sheng, Zhao, Zhi-Juan, Liu, Zong-Shun, Zhu, Jian-Jun, Yang, Jing, Liu, Wei, He, Xiao-Guang, Li, Xiao-Jing, Li, Xiang, Liu, Shuang-Tao, Yang, Hui, Zhang, Li-Qun, Liu, Jian-Ping, Zhang, Yuan-Tao, Du, Guo-Tong (2016) Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC. Chinese Physics B, 25. 57703pp. doi:10.1088/1674-1056/25/5/057703

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Reference TypeJournal (article/letter/editorial)
TitleObservation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC
JournalChinese Physics B
AuthorsLiang, FengAuthor
Chen, PingAuthor
Zhao, De-GangAuthor
Jiang, De-ShengAuthor
Zhao, Zhi-JuanAuthor
Liu, Zong-ShunAuthor
Zhu, Jian-JunAuthor
Yang, JingAuthor
Liu, WeiAuthor
He, Xiao-GuangAuthor
Li, Xiao-JingAuthor
Li, XiangAuthor
Liu, Shuang-TaoAuthor
Yang, HuiAuthor
Zhang, Li-QunAuthor
Liu, Jian-PingAuthor
Zhang, Yuan-TaoAuthor
Du, Guo-TongAuthor
Year2016 (May)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/5/057703Search in ResearchGate
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Mindat Ref. ID6007329Long-form Identifiermindat:1:5:6007329:9
GUID0
Full ReferenceLiang, Feng, Chen, Ping, Zhao, De-Gang, Jiang, De-Sheng, Zhao, Zhi-Juan, Liu, Zong-Shun, Zhu, Jian-Jun, Yang, Jing, Liu, Wei, He, Xiao-Guang, Li, Xiao-Jing, Li, Xiang, Liu, Shuang-Tao, Yang, Hui, Zhang, Li-Qun, Liu, Jian-Ping, Zhang, Yuan-Tao, Du, Guo-Tong (2016) Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC. Chinese Physics B, 25. 57703pp. doi:10.1088/1674-1056/25/5/057703
Plain TextLiang, Feng, Chen, Ping, Zhao, De-Gang, Jiang, De-Sheng, Zhao, Zhi-Juan, Liu, Zong-Shun, Zhu, Jian-Jun, Yang, Jing, Liu, Wei, He, Xiao-Guang, Li, Xiao-Jing, Li, Xiang, Liu, Shuang-Tao, Yang, Hui, Zhang, Li-Qun, Liu, Jian-Ping, Zhang, Yuan-Tao, Du, Guo-Tong (2016) Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC. Chinese Physics B, 25. 57703pp. doi:10.1088/1674-1056/25/5/057703
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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