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Ji, Jianting, Zhang, Anmin, Xia, Tianlong, Gao, Po, Jie, Yinghao, Zhang, Qian, Zhang, Qingming (2016) Strain-modulated excitonic gaps in mono- and bi-layer MoSe 2. Chinese Physics B, 25. 77802pp. doi:10.1088/1674-1056/25/7/077802

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Reference TypeJournal (article/letter/editorial)
TitleStrain-modulated excitonic gaps in mono- and bi-layer MoSe 2
JournalChinese Physics B
AuthorsJi, JiantingAuthor
Zhang, AnminAuthor
Xia, TianlongAuthor
Gao, PoAuthor
Jie, YinghaoAuthor
Zhang, QianAuthor
Zhang, QingmingAuthor
Year2016 (July)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/7/077802Search in ResearchGate
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Mindat Ref. ID6007502Long-form Identifiermindat:1:5:6007502:0
GUID0
Full ReferenceJi, Jianting, Zhang, Anmin, Xia, Tianlong, Gao, Po, Jie, Yinghao, Zhang, Qian, Zhang, Qingming (2016) Strain-modulated excitonic gaps in mono- and bi-layer MoSe 2. Chinese Physics B, 25. 77802pp. doi:10.1088/1674-1056/25/7/077802
Plain TextJi, Jianting, Zhang, Anmin, Xia, Tianlong, Gao, Po, Jie, Yinghao, Zhang, Qian, Zhang, Qingming (2016) Strain-modulated excitonic gaps in mono- and bi-layer MoSe 2. Chinese Physics B, 25. 77802pp. doi:10.1088/1674-1056/25/7/077802
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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