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Deng, Xiao-Chuan, Chen, Xi-Xi, Li, Cheng-Zhan, Shen, Hua-Jun, Zhang, Jin-Ping (2016) Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers. Chinese Physics B, 25. 87201pp. doi:10.1088/1674-1056/25/8/087201

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Reference TypeJournal (article/letter/editorial)
TitleNumerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers
JournalChinese Physics B
AuthorsDeng, Xiao-ChuanAuthor
Chen, Xi-XiAuthor
Li, Cheng-ZhanAuthor
Shen, Hua-JunAuthor
Zhang, Jin-PingAuthor
Year2016 (August)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/8/087201Search in ResearchGate
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Mindat Ref. ID6007577Long-form Identifiermindat:1:5:6007577:4
GUID0
Full ReferenceDeng, Xiao-Chuan, Chen, Xi-Xi, Li, Cheng-Zhan, Shen, Hua-Jun, Zhang, Jin-Ping (2016) Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers. Chinese Physics B, 25. 87201pp. doi:10.1088/1674-1056/25/8/087201
Plain TextDeng, Xiao-Chuan, Chen, Xi-Xi, Li, Cheng-Zhan, Shen, Hua-Jun, Zhang, Jin-Ping (2016) Numerical and experimental study of the mesa configuration in high-voltage 4H–SiC PiN rectifiers. Chinese Physics B, 25. 87201pp. doi:10.1088/1674-1056/25/8/087201
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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