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Wang, Fen, Shen, Shi-Peng, Sun, Young (2016) Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe 12 O 22. Chinese Physics B, 25. 87503pp. doi:10.1088/1674-1056/25/8/087503

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Reference TypeJournal (article/letter/editorial)
TitleMagnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe 12 O 22
JournalChinese Physics B
AuthorsWang, FenAuthor
Shen, Shi-PengAuthor
Sun, YoungAuthor
Year2016 (August)Volume25
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/25/8/087503Search in ResearchGate
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Mindat Ref. ID6007589Long-form Identifiermindat:1:5:6007589:9
GUID0
Full ReferenceWang, Fen, Shen, Shi-Peng, Sun, Young (2016) Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe 12 O 22. Chinese Physics B, 25. 87503pp. doi:10.1088/1674-1056/25/8/087503
Plain TextWang, Fen, Shen, Shi-Peng, Sun, Young (2016) Magnetoelectric memory effect in the Y-type hexaferrite BaSrZnMgFe 12 O 22. Chinese Physics B, 25. 87503pp. doi:10.1088/1674-1056/25/8/087503
In(n.d.) Chinese Physics B Vol. 25. IOP Publishing

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