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Li, Wei, Zheng, Zhi, Wang, Zhigang, Li, Ping, Fu, Xiaojun, He, Zhengrong, Liu, Fan, Yang, Feng, Xiang, Fan, Liu, Luncai (2017) A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer. Chinese Physics B, 26. 17701pp. doi:10.1088/1674-1056/26/1/017701

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Reference TypeJournal (article/letter/editorial)
TitleA novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
JournalChinese Physics B
AuthorsLi, WeiAuthor
Zheng, ZhiAuthor
Wang, ZhigangAuthor
Li, PingAuthor
Fu, XiaojunAuthor
He, ZhengrongAuthor
Liu, FanAuthor
Yang, FengAuthor
Xiang, FanAuthor
Liu, LuncaiAuthor
Year2017 (January)Volume26
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/26/1/017701Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6007768Long-form Identifiermindat:1:5:6007768:4
GUID0
Full ReferenceLi, Wei, Zheng, Zhi, Wang, Zhigang, Li, Ping, Fu, Xiaojun, He, Zhengrong, Liu, Fan, Yang, Feng, Xiang, Fan, Liu, Luncai (2017) A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer. Chinese Physics B, 26. 17701pp. doi:10.1088/1674-1056/26/1/017701
Plain TextLi, Wei, Zheng, Zhi, Wang, Zhigang, Li, Ping, Fu, Xiaojun, He, Zhengrong, Liu, Fan, Yang, Feng, Xiang, Fan, Liu, Luncai (2017) A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer. Chinese Physics B, 26. 17701pp. doi:10.1088/1674-1056/26/1/017701
In(n.d.) Chinese Physics B Vol. 26. IOP Publishing

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