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Wu, Xue-Ke, Huang, Wei-Qi, Huang, Zhong-Mei, Qin, Chao-Jian, Dong, Tai-Ge, Wang, Gang, Tang, Yan-Lin (2017) Band structure of silicon and germanium thin films based on first principles. Chinese Physics B, 26. 37302pp. doi:10.1088/1674-1056/26/3/037302

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Reference TypeJournal (article/letter/editorial)
TitleBand structure of silicon and germanium thin films based on first principles
JournalChinese Physics B
AuthorsWu, Xue-KeAuthor
Huang, Wei-QiAuthor
Huang, Zhong-MeiAuthor
Qin, Chao-JianAuthor
Dong, Tai-GeAuthor
Wang, GangAuthor
Tang, Yan-LinAuthor
Year2017 (March)Volume26
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/26/3/037302Search in ResearchGate
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Mindat Ref. ID6008181Long-form Identifiermindat:1:5:6008181:8
GUID0
Full ReferenceWu, Xue-Ke, Huang, Wei-Qi, Huang, Zhong-Mei, Qin, Chao-Jian, Dong, Tai-Ge, Wang, Gang, Tang, Yan-Lin (2017) Band structure of silicon and germanium thin films based on first principles. Chinese Physics B, 26. 37302pp. doi:10.1088/1674-1056/26/3/037302
Plain TextWu, Xue-Ke, Huang, Wei-Qi, Huang, Zhong-Mei, Qin, Chao-Jian, Dong, Tai-Ge, Wang, Gang, Tang, Yan-Lin (2017) Band structure of silicon and germanium thin films based on first principles. Chinese Physics B, 26. 37302pp. doi:10.1088/1674-1056/26/3/037302
In(n.d.) Chinese Physics B Vol. 26. IOP Publishing


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