Feng, Shenyan, Zhang, Qiaoxuan, Yang, Jie, Lei, Ming, Quhe, Ruge (2017) Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures *. Chinese Physics B, 26. 97401pp. doi:10.1088/1674-1056/26/9/097401
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures * | ||
| Journal | Chinese Physics B | ||
| Authors | Feng, Shenyan | Author | |
| Zhang, Qiaoxuan | Author | ||
| Yang, Jie | Author | ||
| Lei, Ming | Author | ||
| Quhe, Ruge | Author | ||
| Year | 2017 (August) | Volume | 26 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/26/9/097401Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6008663 | Long-form Identifier | mindat:1:5:6008663:7 |
| GUID | 0 | ||
| Full Reference | Feng, Shenyan, Zhang, Qiaoxuan, Yang, Jie, Lei, Ming, Quhe, Ruge (2017) Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures *. Chinese Physics B, 26. 97401pp. doi:10.1088/1674-1056/26/9/097401 | ||
| Plain Text | Feng, Shenyan, Zhang, Qiaoxuan, Yang, Jie, Lei, Ming, Quhe, Ruge (2017) Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures *. Chinese Physics B, 26. 97401pp. doi:10.1088/1674-1056/26/9/097401 | ||
| In | (n.d.) Chinese Physics B Vol. 26. IOP Publishing | ||
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