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Zheng, Wei-Min, Cong, Wei-Yan, Li, Su-Mei, Wang, Ai-Fang, Li, Bin, Huang, Hai-Bei (2018) Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells. Chinese Physics B, 27. 17302pp. doi:10.1088/1674-1056/27/1/017302

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Reference TypeJournal (article/letter/editorial)
TitleRaman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells
JournalChinese Physics B
AuthorsZheng, Wei-MinAuthor
Cong, Wei-YanAuthor
Li, Su-MeiAuthor
Wang, Ai-FangAuthor
Li, BinAuthor
Huang, Hai-BeiAuthor
Year2018 (January)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/1/017302Search in ResearchGate
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Mindat Ref. ID6008749Long-form Identifiermindat:1:5:6008749:6
GUID0
Full ReferenceZheng, Wei-Min, Cong, Wei-Yan, Li, Su-Mei, Wang, Ai-Fang, Li, Bin, Huang, Hai-Bei (2018) Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells. Chinese Physics B, 27. 17302pp. doi:10.1088/1674-1056/27/1/017302
Plain TextZheng, Wei-Min, Cong, Wei-Yan, Li, Su-Mei, Wang, Ai-Fang, Li, Bin, Huang, Hai-Bei (2018) Raman spectrum study of δ -doped GaAs/AlAs multiple-quantum wells. Chinese Physics B, 27. 17302pp. doi:10.1088/1674-1056/27/1/017302
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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Su-Mei, Li, Wei-Min, Zheng, Ying-Xin, Song, Jing, Liu, Ning-Ning, Chu (2009) Intra-acceptor hole relaxation in Be δ-doped GaAs/AlAs multiple quantum wells. Chinese Physics B, 18. 3975-3979 doi:10.1088/1674-1056/18/9/059
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