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Zhang, Yong (2018) Electronic structures of impurities and point defects in semiconductors. Chinese Physics B, 27. 117103pp. doi:10.1088/1674-1056/27/11/117103

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Reference TypeJournal (article/letter/editorial)
TitleElectronic structures of impurities and point defects in semiconductors
JournalChinese Physics B
AuthorsZhang, YongAuthor
Year2018 (November)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/11/117103Search in ResearchGate
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Mindat Ref. ID6008918Long-form Identifiermindat:1:5:6008918:4
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Full ReferenceZhang, Yong (2018) Electronic structures of impurities and point defects in semiconductors. Chinese Physics B, 27. 117103pp. doi:10.1088/1674-1056/27/11/117103
Plain TextZhang, Yong (2018) Electronic structures of impurities and point defects in semiconductors. Chinese Physics B, 27. 117103pp. doi:10.1088/1674-1056/27/11/117103
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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