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Liu, Ting-Ting, Zhang, Kai, Zhu, Guang-Run, Zhou, Jian-Jun, Kong, Yue-Chan, Yu, Xin-Xin, Chen, Tang-Sheng (2018) Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs. Chinese Physics B, 27. 47307pp. doi:10.1088/1674-1056/27/4/047307

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Reference TypeJournal (article/letter/editorial)
TitleInfluence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
JournalChinese Physics B
AuthorsLiu, Ting-TingAuthor
Zhang, KaiAuthor
Zhu, Guang-RunAuthor
Zhou, Jian-JunAuthor
Kong, Yue-ChanAuthor
Yu, Xin-XinAuthor
Chen, Tang-ShengAuthor
Year2018 (April)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/4/047307Search in ResearchGate
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Mindat Ref. ID6009263Long-form Identifiermindat:1:5:6009263:8
GUID0
Full ReferenceLiu, Ting-Ting, Zhang, Kai, Zhu, Guang-Run, Zhou, Jian-Jun, Kong, Yue-Chan, Yu, Xin-Xin, Chen, Tang-Sheng (2018) Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs. Chinese Physics B, 27. 47307pp. doi:10.1088/1674-1056/27/4/047307
Plain TextLiu, Ting-Ting, Zhang, Kai, Zhu, Guang-Run, Zhou, Jian-Jun, Kong, Yue-Chan, Yu, Xin-Xin, Chen, Tang-Sheng (2018) Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs. Chinese Physics B, 27. 47307pp. doi:10.1088/1674-1056/27/4/047307
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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