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Zhong, Xue-Qian, Wang, Jue, Wang, Bao-Zhu, Wang, Heng-Yu, Guo, Qing, Sheng, Kuang (2018) Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes. Chinese Physics B, 27. 87102pp. doi:10.1088/1674-1056/27/8/087102

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Reference TypeJournal (article/letter/editorial)
TitleInvestigations on mesa width design for 4H–SiC trench super junction Schottky diodes
JournalChinese Physics B
AuthorsZhong, Xue-QianAuthor
Wang, JueAuthor
Wang, Bao-ZhuAuthor
Wang, Heng-YuAuthor
Guo, QingAuthor
Sheng, KuangAuthor
Year2018 (August)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/8/087102Search in ResearchGate
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Mindat Ref. ID6009603Long-form Identifiermindat:1:5:6009603:2
GUID0
Full ReferenceZhong, Xue-Qian, Wang, Jue, Wang, Bao-Zhu, Wang, Heng-Yu, Guo, Qing, Sheng, Kuang (2018) Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes. Chinese Physics B, 27. 87102pp. doi:10.1088/1674-1056/27/8/087102
Plain TextZhong, Xue-Qian, Wang, Jue, Wang, Bao-Zhu, Wang, Heng-Yu, Guo, Qing, Sheng, Kuang (2018) Investigations on mesa width design for 4H–SiC trench super junction Schottky diodes. Chinese Physics B, 27. 87102pp. doi:10.1088/1674-1056/27/8/087102
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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