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Wang, Hui-De, Sang, David K, Guo, Zhi-Nan, Cao, Rui, Zhao, Jin-Lai, Ullah Shah, Muhammad Najeeb, Fan, Tao-Jian, Fan, Dian-Yuan, Zhang, Han (2018) Black phosphorus-based field effect transistor devices for Ag ions detection. Chinese Physics B, 27. 87308pp. doi:10.1088/1674-1056/27/8/087308

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Reference TypeJournal (article/letter/editorial)
TitleBlack phosphorus-based field effect transistor devices for Ag ions detection
JournalChinese Physics B
AuthorsWang, Hui-DeAuthor
Sang, David KAuthor
Guo, Zhi-NanAuthor
Cao, RuiAuthor
Zhao, Jin-LaiAuthor
Ullah Shah, Muhammad NajeebAuthor
Fan, Tao-JianAuthor
Fan, Dian-YuanAuthor
Zhang, HanAuthor
Year2018 (August)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/8/087308Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6009611Long-form Identifiermindat:1:5:6009611:1
GUID0
Full ReferenceWang, Hui-De, Sang, David K, Guo, Zhi-Nan, Cao, Rui, Zhao, Jin-Lai, Ullah Shah, Muhammad Najeeb, Fan, Tao-Jian, Fan, Dian-Yuan, Zhang, Han (2018) Black phosphorus-based field effect transistor devices for Ag ions detection. Chinese Physics B, 27. 87308pp. doi:10.1088/1674-1056/27/8/087308
Plain TextWang, Hui-De, Sang, David K, Guo, Zhi-Nan, Cao, Rui, Zhao, Jin-Lai, Ullah Shah, Muhammad Najeeb, Fan, Tao-Jian, Fan, Dian-Yuan, Zhang, Han (2018) Black phosphorus-based field effect transistor devices for Ag ions detection. Chinese Physics B, 27. 87308pp. doi:10.1088/1674-1056/27/8/087308
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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