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Li, Yong-Liang, Xu, Qiu-Xia, Wang, Wen-Wu (2018) Key technologies for dual high- k and dual metal gate integration. Chinese Physics B, 27. 97306pp. doi:10.1088/1674-1056/27/9/097306

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Reference TypeJournal (article/letter/editorial)
TitleKey technologies for dual high- k and dual metal gate integration
JournalChinese Physics B
AuthorsLi, Yong-LiangAuthor
Xu, Qiu-XiaAuthor
Wang, Wen-WuAuthor
Year2018 (September)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/9/097306Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6009709Long-form Identifiermindat:1:5:6009709:5
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Full ReferenceLi, Yong-Liang, Xu, Qiu-Xia, Wang, Wen-Wu (2018) Key technologies for dual high- k and dual metal gate integration. Chinese Physics B, 27. 97306pp. doi:10.1088/1674-1056/27/9/097306
Plain TextLi, Yong-Liang, Xu, Qiu-Xia, Wang, Wen-Wu (2018) Key technologies for dual high- k and dual metal gate integration. Chinese Physics B, 27. 97306pp. doi:10.1088/1674-1056/27/9/097306
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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