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Zhao, Xiao-Song, Han, Wei-Hua, Guo, Yang-Yan, Dou, Ya-Mei, Yang, Fu-Hua (2018) Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors. Chinese Physics B, 27. 97310pp. doi:10.1088/1674-1056/27/9/097310

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Reference TypeJournal (article/letter/editorial)
TitleTransport spectroscopy through dopant atom array in silicon junctionless nanowire transistors
JournalChinese Physics B
AuthorsZhao, Xiao-SongAuthor
Han, Wei-HuaAuthor
Guo, Yang-YanAuthor
Dou, Ya-MeiAuthor
Yang, Fu-HuaAuthor
Year2018 (September)Volume27
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/27/9/097310Search in ResearchGate
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Mindat Ref. ID6009713Long-form Identifiermindat:1:5:6009713:8
GUID0
Full ReferenceZhao, Xiao-Song, Han, Wei-Hua, Guo, Yang-Yan, Dou, Ya-Mei, Yang, Fu-Hua (2018) Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors. Chinese Physics B, 27. 97310pp. doi:10.1088/1674-1056/27/9/097310
Plain TextZhao, Xiao-Song, Han, Wei-Hua, Guo, Yang-Yan, Dou, Ya-Mei, Yang, Fu-Hua (2018) Transport spectroscopy through dopant atom array in silicon junctionless nanowire transistors. Chinese Physics B, 27. 97310pp. doi:10.1088/1674-1056/27/9/097310
In(n.d.) Chinese Physics B Vol. 27. IOP Publishing

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Ma, Liu-Hong, Han, Wei-Hua, Zhao, Xiao-Song, Guo, Yang-Yan, Dou, Ya-Mei, Yang, Fu-Hua (2018) Influence of dopant concentration on electrical quantum transport behaviors in junctionless nanowire transistors. Chinese Physics B, 27. 88106pp. doi:10.1088/1674-1056/27/8/088106
Guo, Yang-Yan, Han, Wei-Hua, Zhao, Xiao-Song, Dou, Ya-Mei, Zhang, Xiao-Di, Wu, Xin-Yu, Yang, Fu-Hua (2019) Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors. Chinese Physics B, 28. 107303pp. doi:10.1088/1674-1056/ab3e68
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Guo, Yang-Yan, Han, Wei-Hua, Zhang, Xiao-Di, Chen, Jun-Dong, Yang, Fu-Hua (2022) Observation of source/drain bias-controlled quantum transport spectrum in junctionless silicon nanowire transistor. Chinese Physics B, 31 (1) 17701pp. doi:10.1088/1674-1056/ac21ba
Wang, Hao, Han, Wei-Hua, Zhao, Xiao-Song, Zhang, Wang, Lyu, Qi-Feng, Ma, Liu-Hong, Yang, Fu-Hua (2016) Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire transistor. Chinese Physics B, 25. 108102pp. doi:10.1088/1674-1056/25/10/108102
Ma, Liu-Hong, Han, Wei-Hua, Wang, Hao, Lyu, Qi-feng, Zhang, Wang, Yang, Xiang, Yang, Fu-Hua (2016) Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing. Chinese Physics B, 25. 68103pp. doi:10.1088/1674-1056/25/6/068103
Wang, Hao, Han, Wei-Hua, Ma, Liu-Hong, Li, Xiao-Ming, Yang, Fu-Hua (2014) Quantum transport characteristics in single and multiple N-channel junctionless nanowire transistors at low temperatures. Chinese Physics B, 23. 88107pp. doi:10.1088/1674-1056/23/8/088107
Zhang, Wang, Han, Wei-Hua, Zhao, Xiao-Song, Lv, Qi-Feng, Ji, Xiang-Hai, Yang, Tao, Yang, Fu-Hua (2017) Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substrate. Chinese Physics B, 26. 88101pp. doi:10.1088/1674-1056/26/8/088101
Ma, Liu-Hong, Han, Wei-Hua, Wang, Hao, Yang, Xiang, Yang, Fu-Hua (2015) Charge trapping in surface accumulation layer of heavily doped junctionless nanowire transistors. Chinese Physics B, 24. 128101pp. doi:10.1088/1674-1056/24/12/128101
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