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Wang, Shuopei, He, Congli, Tang, Jian, Yang, Rong, Shi, Dongxia, Zhang, Guangyu (2019) Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor. Chinese Physics B, 28. 17304pp. doi:10.1088/1674-1056/28/1/017304

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Reference TypeJournal (article/letter/editorial)
TitleElectronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor
JournalChinese Physics B
AuthorsWang, ShuopeiAuthor
He, CongliAuthor
Tang, JianAuthor
Yang, RongAuthor
Shi, DongxiaAuthor
Zhang, GuangyuAuthor
Year2019 (January)Volume28
PublisherIOP Publishing
DOIdoi:10.1088/1674-1056/28/1/017304Search in ResearchGate
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Mindat Ref. ID6009802Long-form Identifiermindat:1:5:6009802:1
GUID0
Full ReferenceWang, Shuopei, He, Congli, Tang, Jian, Yang, Rong, Shi, Dongxia, Zhang, Guangyu (2019) Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor. Chinese Physics B, 28. 17304pp. doi:10.1088/1674-1056/28/1/017304
Plain TextWang, Shuopei, He, Congli, Tang, Jian, Yang, Rong, Shi, Dongxia, Zhang, Guangyu (2019) Electronic synapses based on ultrathin quasi-two-dimensional gallium oxide memristor. Chinese Physics B, 28. 17304pp. doi:10.1088/1674-1056/28/1/017304
In(n.d.) Chinese Physics B Vol. 28. IOP Publishing

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