Ge, Mei, Cai, Qing, Zhang, Bao-Hua, Chen, Dun-Jun, Hu, Li-Qun, Xue, Jun-Jun, Lu, Hai, Zhang, Rong, Zheng, You-Dou (2019) Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer. Chinese Physics B, 28. 107301pp. doi:10.1088/1674-1056/ab3e00
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer | ||
| Journal | Chinese Physics B | ||
| Authors | Ge, Mei | Author | |
| Cai, Qing | Author | ||
| Zhang, Bao-Hua | Author | ||
| Chen, Dun-Jun | Author | ||
| Hu, Li-Qun | Author | ||
| Xue, Jun-Jun | Author | ||
| Lu, Hai | Author | ||
| Zhang, Rong | Author | ||
| Zheng, You-Dou | Author | ||
| Year | 2019 (October) | Volume | 28 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1674-1056/ab3e00Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6009847 | Long-form Identifier | mindat:1:5:6009847:4 |
| GUID | 0 | ||
| Full Reference | Ge, Mei, Cai, Qing, Zhang, Bao-Hua, Chen, Dun-Jun, Hu, Li-Qun, Xue, Jun-Jun, Lu, Hai, Zhang, Rong, Zheng, You-Dou (2019) Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer. Chinese Physics B, 28. 107301pp. doi:10.1088/1674-1056/ab3e00 | ||
| Plain Text | Ge, Mei, Cai, Qing, Zhang, Bao-Hua, Chen, Dun-Jun, Hu, Li-Qun, Xue, Jun-Jun, Lu, Hai, Zhang, Rong, Zheng, You-Dou (2019) Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer. Chinese Physics B, 28. 107301pp. doi:10.1088/1674-1056/ab3e00 | ||
| In | (n.d.) Chinese Physics B Vol. 28. IOP Publishing | ||
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