Zhao, G L, Bagayoko, D (2000) Electronic structure and charge transfer in 3C- and 4H-SiC. New Journal of Physics, 2. 16 doi:10.1088/1367-2630/2/1/316
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Electronic structure and charge transfer in 3C- and 4H-SiC | ||
| Journal | New Journal of Physics | ||
| Authors | Zhao, G L | Author | |
| Bagayoko, D | Author | ||
| Year | 2000 (July 18) | Volume | 2 |
| Publisher | IOP Publishing | ||
| DOI | doi:10.1088/1367-2630/2/1/316Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 6048691 | Long-form Identifier | mindat:1:5:6048691:6 |
| GUID | 0 | ||
| Full Reference | Zhao, G L, Bagayoko, D (2000) Electronic structure and charge transfer in 3C- and 4H-SiC. New Journal of Physics, 2. 16 doi:10.1088/1367-2630/2/1/316 | ||
| Plain Text | Zhao, G L, Bagayoko, D (2000) Electronic structure and charge transfer in 3C- and 4H-SiC. New Journal of Physics, 2. 16 doi:10.1088/1367-2630/2/1/316 | ||
| In | (n.d.) New Journal of Physics Vol. 2. IOP Publishing | ||
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