Zhang, Yanwen, Sachan, Ritesh, Pakarinen, Olli H., Chisholm, Matthew F., Liu, Peng, Xue, Haizhou, Weber, William J. (2015) Ionization-induced annealing of pre-existing defects in silicon carbide. Nature Communications, 6. doi:10.1038/ncomms9049
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Ionization-induced annealing of pre-existing defects in silicon carbide | ||
Journal | Nature Communications | ||
Authors | Zhang, Yanwen | Author | |
Sachan, Ritesh | Author | ||
Pakarinen, Olli H. | Author | ||
Chisholm, Matthew F. | Author | ||
Liu, Peng | Author | ||
Xue, Haizhou | Author | ||
Weber, William J. | Author | ||
Year | 2015 (November) | Volume | 6 |
Publisher | Springer Science and Business Media LLC | ||
DOI | doi:10.1038/ncomms9049Search in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 6064997 | Long-form Identifier | mindat:1:5:6064997:7 |
GUID | 0 | ||
Full Reference | Zhang, Yanwen, Sachan, Ritesh, Pakarinen, Olli H., Chisholm, Matthew F., Liu, Peng, Xue, Haizhou, Weber, William J. (2015) Ionization-induced annealing of pre-existing defects in silicon carbide. Nature Communications, 6. doi:10.1038/ncomms9049 | ||
Plain Text | Zhang, Yanwen, Sachan, Ritesh, Pakarinen, Olli H., Chisholm, Matthew F., Liu, Peng, Xue, Haizhou, Weber, William J. (2015) Ionization-induced annealing of pre-existing defects in silicon carbide. Nature Communications, 6. doi:10.1038/ncomms9049 | ||
In | (2015) Nature Communications Vol. 6. Springer Science and Business Media LLC |
See Also
These are possibly similar items as determined by title/reference text matching only.