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Kim, E, Lee, Y. H, Lee, H. J, Hwang, Y. G (1997) Defects in amorphous Si 1 − x Ge x alloys: An explanation of electron spin resonance signals. Europhysics Letters (EPL), 40. 147-152 doi:10.1209/epl/i1997-00437-y

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Reference TypeJournal (article/letter/editorial)
TitleDefects in amorphous Si 1 − x Ge x alloys: An explanation of electron spin resonance signals
JournalEurophysics Letters (EPL)
AuthorsKim, EAuthor
Lee, Y. HAuthor
Lee, H. JAuthor
Hwang, Y. GAuthor
Year1997 (October 15)Volume40
PublisherIOP Publishing
DOIdoi:10.1209/epl/i1997-00437-ySearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID6104153Long-form Identifiermindat:1:5:6104153:4
GUID0
Full ReferenceKim, E, Lee, Y. H, Lee, H. J, Hwang, Y. G (1997) Defects in amorphous Si 1 − x Ge x alloys: An explanation of electron spin resonance signals. Europhysics Letters (EPL), 40. 147-152 doi:10.1209/epl/i1997-00437-y
Plain TextKim, E, Lee, Y. H, Lee, H. J, Hwang, Y. G (1997) Defects in amorphous Si 1 − x Ge x alloys: An explanation of electron spin resonance signals. Europhysics Letters (EPL), 40. 147-152 doi:10.1209/epl/i1997-00437-y
In(n.d.) Europhysics Letters (EPL) Vol. 40. IOP Publishing

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