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Kukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Osipova, E. V., Pechnikov, A. I., Feoktistov, N. A. (2016) Epitaxial gallium oxide on a SiC/Si substrate. Physics of the Solid State, 58. 1876-1881 doi:10.1134/s1063783416090201

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial gallium oxide on a SiC/Si substrate
JournalPhysics of the Solid State
AuthorsKukushkin, S. A.Author
Nikolaev, V. I.Author
Osipov, A. V.Author
Osipova, E. V.Author
Pechnikov, A. I.Author
Feoktistov, N. A.Author
Year2016 (September)Volume58
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063783416090201Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID6156802Long-form Identifiermindat:1:5:6156802:2
GUID0
Full ReferenceKukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Osipova, E. V., Pechnikov, A. I., Feoktistov, N. A. (2016) Epitaxial gallium oxide on a SiC/Si substrate. Physics of the Solid State, 58. 1876-1881 doi:10.1134/s1063783416090201
Plain TextKukushkin, S. A., Nikolaev, V. I., Osipov, A. V., Osipova, E. V., Pechnikov, A. I., Feoktistov, N. A. (2016) Epitaxial gallium oxide on a SiC/Si substrate. Physics of the Solid State, 58. 1876-1881 doi:10.1134/s1063783416090201
In(n.d.) Physics of the Solid State Vol. 58. Pleiades Publishing Ltd

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Kukushkin, S. A., Osipov, A. V., Romanychev, A. I. (2016) Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates. Physics of the Solid State, 58. 1448-1452 doi:10.1134/s1063783416070246
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Kukushkin, S. A., Osipov, A. V., Bessolov, V. N., Konenkova, E. V., Panteleev, V. N. (2017) Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates. Physics of the Solid State, 59. 674-681 doi:10.1134/s1063783417040114
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