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Gaman, V. I., Kalygina, V. M. (1967) Determination of the rate of surface recombination of the base of alloyed germanium transistors. Soviet Physics Journal, 10. 78-80 doi:10.1007/bf00820308

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Reference TypeJournal (article/letter/editorial)
TitleDetermination of the rate of surface recombination of the base of alloyed germanium transistors
JournalSoviet Physics Journal
AuthorsGaman, V. I.Author
Kalygina, V. M.Author
Year1967 (October)Volume10
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/bf00820308Search in ResearchGate
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Mindat Ref. ID6186003Long-form Identifiermindat:1:5:6186003:6
GUID0
Full ReferenceGaman, V. I., Kalygina, V. M. (1967) Determination of the rate of surface recombination of the base of alloyed germanium transistors. Soviet Physics Journal, 10. 78-80 doi:10.1007/bf00820308
Plain TextGaman, V. I., Kalygina, V. M. (1967) Determination of the rate of surface recombination of the base of alloyed germanium transistors. Soviet Physics Journal, 10. 78-80 doi:10.1007/bf00820308
In(1967) Soviet Physics Journal Vol. 10. Springer Science and Business Media LLC

See Also

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Gaman, V. I., Kalygina, V. M., Baltakov, F. N. (1968) Injection-level dependence of the surface recombination rate of the base of alloyed germanium diodes. Soviet Physics Journal, 11. 103-105 doi:10.1007/bf00816074
Gaman, V. I., Kalygina, V. M. (1967) Effects of surface recombination on the reverse current of thin-base Ge diodes. Soviet Physics Journal, 10. 57-59 doi:10.1007/bf00843554
Gaman, V. I., Zaidman, S. A. (1967) Effects of surface recombination rate on transients in silicon diodes. Soviet Physics Journal, 10. 83-84 doi:10.1007/bf00819998
Gaman, V. I., Zaidman, S. A. (1967) Effects of temperature and injection level on the rate of surface recombination for silicon diodes. Soviet Physics Journal, 10. 84-85 doi:10.1007/bf00819999
Kalygina, V. M., Kosintsev, V. I., Gaman, V. I. (1978) Dielectric properties of thin films of vanadium-phosphate glass. Soviet Physics Journal, 21. 1436-1443 doi:10.1007/bf00890351
Kalygina, V. M., Gaman, V. I., Badluev, A. I. (1980) Dielectric properties of thin films of chalcogenide glasses. Soviet Physics Journal, 23. 779-783 doi:10.1007/bf00892524
Kalygina, V. M., Gaman, V. I., Minaev, V. S., Topalova, L. I. (1974) Memory effect in vanadium-phosphorus glasses. Soviet Physics Journal, 17. 1102-1106 doi:10.1007/bf00901600
Kalygina, V. M., Kosintsev, V. I., Gaman, V. I., Bogomolova, L. D., Modebadze, O. E. (1983) Properties of Bi2O3-V2O5-CaO glasses. Soviet Physics Journal, 26. 527-530 doi:10.1007/bf00891922
Ryannel', �. F., Gaman, V. I., Kalygina, V. M. (1976) Optical absorption in films of V2O5 and vanadium-phosphorus glasses. Soviet Physics Journal, 19. 215-219 doi:10.1007/bf00942871
Gaman, V. I., Agafonnikoy, V. F. (1967) The effect of an anisotropic pressure on the reverse currents and the lifetime of minority carriers in germanium diodes. Soviet Physics Journal, 10. 34-36 doi:10.1007/bf00821997
Kalygina, V. M., Gaman, V. I., Makarov, A. A. (1972) Properties of M-D-M structures based on glass of the system V2O5-P2O5. II. Soviet Physics Journal, 15. 1342-1344 doi:10.1007/bf00901532
 
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