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Emel’yanov, A. M., Abolmasov, S. N., Terukov, E. I. (2016) Photoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking. Technical Physics Letters, 42. 1002-1004 doi:10.1134/s1063785016100059

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Reference TypeJournal (article/letter/editorial)
TitlePhotoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking
JournalTechnical Physics Letters
AuthorsEmel’yanov, A. M.Author
Abolmasov, S. N.Author
Terukov, E. I.Author
Year2016 (October)Volume42
PublisherPleiades Publishing Ltd
DOIdoi:10.1134/s1063785016100059Search in ResearchGate
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Mindat Ref. ID6209087Long-form Identifiermindat:1:5:6209087:4
GUID0
Full ReferenceEmel’yanov, A. M., Abolmasov, S. N., Terukov, E. I. (2016) Photoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking. Technical Physics Letters, 42. 1002-1004 doi:10.1134/s1063785016100059
Plain TextEmel’yanov, A. M., Abolmasov, S. N., Terukov, E. I. (2016) Photoluminescence at the fundamental absorption edge of single-crystal silicon textured without masking. Technical Physics Letters, 42. 1002-1004 doi:10.1134/s1063785016100059
In(n.d.) Technical Physics Letters Vol. 42. Pleiades Publishing Ltd

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Emel’yanov, A. M. (2009) Edge luminescence of single-crystal silicon modulated by voltage variation on the p-n junction. Technical Physics Letters, 35. 873-875 doi:10.1134/s1063785009090259
Sachenko, A. V., Kryuchenko, Yu. V., Kostylyov, V. P., Korkishko, R. M., Sokolovskyi, I. O., Abramov, A. S., Abolmasov, S. N., Andronikov, D. A., Bobyl’, A. V., Panaiotti, I. E., Terukov, E. I., Titov, A. S., Shvarts, M. Z. (2016) The temperature dependence of the characteristics of crystalline-silicon-based heterojunction solar cells. Technical Physics Letters, 42. 313-316 doi:10.1134/s1063785016030305
Abolmasov, S. N., Abramov, A. S., Ivanov, G. A., Terukov, E. I., Emtsev, K. V., Nyapshaev, I. A., Bazeley, A. A., Gubin, S. P., Kornilov, D. Yu., Tkachev, S. V., Kim, V. P., Ryndin, D. A., Levchenkova, V. I. (2017) Heterojunction solar cells based on single-crystal silicon with an inkjet-printed contact grid. Technical Physics Letters, 43. 78-80 doi:10.1134/s1063785017010023
Emel’yanov, V. M., Bobyl’, A. V., Terukov, E. I., Chesta, O. I., Shvarts, M. Z. (2013) Photoinduced degradation of α-Si:H/μc-Si:H tandem photoconvertes at elevated temperatures. Technical Physics Letters, 39. 906-909 doi:10.1134/s1063785013100179
Panaiotti, I. E., Terukov, E. I. (2019) A Study of the Effect of Radiation on Recombination Loss in Heterojunction Solar Cells Based on Single-Crystal Silicon. Technical Physics Letters, 45. 193-196 doi:10.1134/s106378501903012x
Emel’yanov, A. M., Sobolev, N. A. (2008) High-power silicon LEDs with near-band-edge luminescence. Technical Physics Letters, 34. 166-168 doi:10.1134/s1063785008020247
Sukhorukov, Yu. P., Loshkareva, N. N., Moskvin, A. S., Arbuzov, V. L., Naumov, S. V. (1998) Influence of electron irradiation on the fundamental absorption edge of a copper monoxide CuO single crystal. Technical Physics Letters, 24. 127-129 doi:10.1134/1.1262021
Emel’yanov, A. M. (2004) The mechanism of radiative recombination in the region of interband transitions in single crystal silicon. Technical Physics Letters, 30. 964-966 doi:10.1134/1.1829357
Belik, V. P., Vasyutinskii, O. S., Kukin, A. V., Petrov, M. A., Popov, R. S., Terukov, E. I. (2016) Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses. Technical Physics Letters, 42. 788-791 doi:10.1134/s1063785016080058
Emel’yanov, V. I., Kamenev, B. V., Kashkarov, P. K., Konstantinova, E. I., Timoshenko, V. Yu., Terukov, E. I., Bresler, M. S., Gusev, O. B. (2000) Superluminescence of Er3+ in an amorphous silicon matrix. Physics of the Solid State, 42. 1410-1413 doi:10.1134/1.1307043
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