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Zanatta, A.R, Nunes, L.A.O (1998) 1.54 μm photoluminescence of Er-containing N-doped a-Si:H. Journal of Non-Crystalline Solids, 227. 389-393 doi:10.1016/s0022-3093(98)00081-7

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Reference TypeJournal (article/letter/editorial)
Title1.54 μm photoluminescence of Er-containing N-doped a-Si:H
JournalJournal of Non-Crystalline Solids
AuthorsZanatta, A.RAuthor
Nunes, L.A.OAuthor
Year1998 (May)Volume227
PublisherElsevier BV
DOIdoi:10.1016/s0022-3093(98)00081-7Search in ResearchGate
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Mindat Ref. ID637079Long-form Identifiermindat:1:5:637079:8
GUID0
Full ReferenceZanatta, A.R, Nunes, L.A.O (1998) 1.54 μm photoluminescence of Er-containing N-doped a-Si:H. Journal of Non-Crystalline Solids, 227. 389-393 doi:10.1016/s0022-3093(98)00081-7
Plain TextZanatta, A.R, Nunes, L.A.O (1998) 1.54 μm photoluminescence of Er-containing N-doped a-Si:H. Journal of Non-Crystalline Solids, 227. 389-393 doi:10.1016/s0022-3093(98)00081-7
In(1998) Journal of Non-Crystalline Solids Vol. 227. Elsevier BV

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Tessler, Leandro R, Zanatta, A.R (1998) Erbium luminescence in a-Si:H. Journal of Non-Crystalline Solids, 227. 399-402 doi:10.1016/s0022-3093(98)00082-9
Zanatta, A.R (2000) Infrared photoluminescence from Er-doped a-GaAsN alloys. Journal of Non-Crystalline Solids, 266. 854-858 doi:10.1016/s0022-3093(99)00855-8
Bresler, Mikhail, Gusev, Oleg, Kuznetsov, Alexey, Kudoyarova, Vera, Terukov, Evgenii, Yassievich, Irina, Fuhs, Walther, Ulber, Isabell, Weiser, Gerhard (1998) Photoluminescence at 1.54 μm of Er-doped hydrogenated amorphous silicon. Journal of Non-Crystalline Solids, 227. 394-398 doi:10.1016/s0022-3093(98)00240-3
Fedders, Peter A, Drabold, D.A (1998) Simulations of boron doping in a-Si:H. Journal of Non-Crystalline Solids, 227. 376-379 doi:10.1016/s0022-3093(98)00078-7
Tessler, Leandro R, Iñiguez, Ana Carola (2000) Optimization of the as-deposited 1.54 μm photoluminescence intensity in a-SiOx:H〈Er〉. Journal of Non-Crystalline Solids, 266. 603-607 doi:10.1016/s0022-3093(99)00751-6
Danesh, P., Bedikjan, L., Savatinova, I., Liarokapis, E. (1998) Photoluminescence of porous silicon prepared from crystallized a-Si:H films. Journal of Non-Crystalline Solids, 227. 1049-1052 doi:10.1016/s0022-3093(98)00247-6
Norberg, R.E, Leopold, D.J, Fedders, P.A (1998) Non-bonded hydrogen in a-Si:H. Journal of Non-Crystalline Solids, 227. 124-127 doi:10.1016/s0022-3093(98)00267-1
Lerner, C, Lips, K, Fuhs, W (1998) Spin-dependent processes in a-Si:H Schottky barrier diodes. Journal of Non-Crystalline Solids, 227. 1177-1181 doi:10.1016/s0022-3093(98)00300-7
Topič, Marko, Smole, Franc, Furlan, Jože, Kusian, Wilhelm (1998) Stacked a-Si:H-based three-colour detectors. Journal of Non-Crystalline Solids, 227. 1326-1329 doi:10.1016/s0022-3093(98)00211-7
Juška, G, Arlauskas, K, Equer, B, Vanderhaghen, R (1998) High electric field hole mobility in a-Si:H. Journal of Non-Crystalline Solids, 227. 176-179 doi:10.1016/s0022-3093(98)00033-7
Rath, J.K., Rubinelli, F.A., Schropp, R.E.I. (1998) Microcrystalline n- and p-layers at the tunnel junction of a-Si:H/a-Si:H tandem cells. Journal of Non-Crystalline Solids, 227. 1282-1286 doi:10.1016/s0022-3093(98)00319-6
 
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