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Zhang, J.J., Shimizu, K., Hanna, J. (2004) High mobility top-gate thin film transistors fabricated with poly-Si1−xGex thin films on glass substrate. Journal of Non-Crystalline Solids, 338. 740-743 doi:10.1016/j.jnoncrysol.2004.03.081

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Reference TypeJournal (article/letter/editorial)
TitleHigh mobility top-gate thin film transistors fabricated with poly-Si1−xGex thin films on glass substrate
JournalJournal of Non-Crystalline Solids
AuthorsZhang, J.J.Author
Shimizu, K.Author
Hanna, J.Author
Year2004 (June)Volume338
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2004.03.081Search in ResearchGate
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Mindat Ref. ID642247Long-form Identifiermindat:1:5:642247:3
GUID0
Full ReferenceZhang, J.J., Shimizu, K., Hanna, J. (2004) High mobility top-gate thin film transistors fabricated with poly-Si1−xGex thin films on glass substrate. Journal of Non-Crystalline Solids, 338. 740-743 doi:10.1016/j.jnoncrysol.2004.03.081
Plain TextZhang, J.J., Shimizu, K., Hanna, J. (2004) High mobility top-gate thin film transistors fabricated with poly-Si1−xGex thin films on glass substrate. Journal of Non-Crystalline Solids, 338. 740-743 doi:10.1016/j.jnoncrysol.2004.03.081
In(2004) Journal of Non-Crystalline Solids Vol. 338. Elsevier BV

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Lee, J.W., Shimizu, K., Hanna, J. (2004) Deposition of high crystallinity poly-Si films on glass substrate and fabrication of high mobility bottom-gate TFT. Journal of Non-Crystalline Solids, 338. 173-177 doi:10.1016/j.jnoncrysol.2004.02.047
Knipp, D., Street, R.A. (2004) Pentacene thin film transistors on large area compatible gate dielectrics. Journal of Non-Crystalline Solids, 338. 595-598 doi:10.1016/j.jnoncrysol.2004.03.049
Wakagi, Masatoshi, Yonamoto, Yoshiki, Ogata, Kiyoshi, Shimizu, Kousaku, Hanna, Jun-ichi (2006) EXAFS study on poly-Si1−XGeX films prepared by reactive thermal CVD method. Journal of Non-Crystalline Solids, 352 (30) 3191-3195 doi:10.1016/j.jnoncrysol.2006.05.013
Puigdollers, J., Voz, C., Martin, I., Orpella, A., Vetter, M., Alcubilla, R. (2004) Pentacene thin-film transistors on polymeric gate dielectric: device fabrication and electrical characterization. Journal of Non-Crystalline Solids, 338. 617-621 doi:10.1016/j.jnoncrysol.2004.03.054
Zhang, J.J, Shimizu, K, Hanna, J (2002) Low temperature poly-SixGe1−x deposited by reactive thermal CVD for thin film transistor application. Journal of Non-Crystalline Solids, 299. 163-167 doi:10.1016/s0022-3093(01)01196-6
Street, R.A., Salleo, A., Chabinyc, M., Paul, K. (2004) Localized state effects in polymer thin film transistors. Journal of Non-Crystalline Solids, 338. 607-611 doi:10.1016/j.jnoncrysol.2004.03.052
Forhan, N.A.E., Fantini, M.C.A., Pereyra, I. (2004) Nano-crystalline Si1−xCx:H thin films deposited by PECVD for SiC-on-insulator application. Journal of Non-Crystalline Solids, 338. 119-122 doi:10.1016/j.jnoncrysol.2004.02.034
Gleskova, H., Hsu, P.I., Xi, Z., Sturm, J.C., Suo, Z., Wagner, S. (2004) Field-effect mobility of amorphous silicon thin-film transistors under strain. Journal of Non-Crystalline Solids, 338. 732-735 doi:10.1016/j.jnoncrysol.2004.03.079
Lim, C., Lee, J.W., Hanna, J. (2008) Deposition of device grade poly-Si films on glass substrate directly at 450°C and fabrication of bottom-gate poly-Si TFTs. Journal of Non-Crystalline Solids, 354 (19) 2500-2504 doi:10.1016/j.jnoncrysol.2007.10.082
Zhang, J.J., Shimizu, K., Zhao, Y., Xue, J.M., Geng, X.H., Xiong, S.Z., Wu, C.Y., Hanna, J. (2006) Influences of GeF4 on poly-SiGe films prepared by reactive thermal CVD. Journal of Non-Crystalline Solids, 352 (9) 1275-1278 doi:10.1016/j.jnoncrysol.2005.11.148
Saboundji, A., Mohammed-Brahim, T., Andrä, G., Bergmann, J., Falk, F. (2004) Thin film transistors on large single crystalline regions of silicon induced by cw laser crystallization. Journal of Non-Crystalline Solids, 338. 758-761 doi:10.1016/j.jnoncrysol.2004.03.085
 
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