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Stoyanov, S., Métois, J.J., Tonchev, V. (2000) Current induced bunches of steps on the Si(111) surface – a key to measuring the temperature dependence of the step interaction coefficient. Surface Science, 465 (3). 227-242 doi:10.1016/s0039-6028(00)00652-x

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Reference TypeJournal (article/letter/editorial)
TitleCurrent induced bunches of steps on the Si(111) surface – a key to measuring the temperature dependence of the step interaction coefficient
JournalSurface Science
AuthorsStoyanov, S.Author
Métois, J.J.Author
Tonchev, V.Author
Year2000 (October)Volume465
Issue3
PublisherElsevier BV
DOIdoi:10.1016/s0039-6028(00)00652-xSearch in ResearchGate
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Mindat Ref. ID6475105Long-form Identifiermindat:1:5:6475105:8
GUID0
Full ReferenceStoyanov, S., Métois, J.J., Tonchev, V. (2000) Current induced bunches of steps on the Si(111) surface – a key to measuring the temperature dependence of the step interaction coefficient. Surface Science, 465 (3). 227-242 doi:10.1016/s0039-6028(00)00652-x
Plain TextStoyanov, S., Métois, J.J., Tonchev, V. (2000) Current induced bunches of steps on the Si(111) surface – a key to measuring the temperature dependence of the step interaction coefficient. Surface Science, 465 (3). 227-242 doi:10.1016/s0039-6028(00)00652-x
In(2000, October) Surface Science Vol. 465 (3) Elsevier BV

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Métois, J.J., Stoyanov, S. (1999) Impact of the growth on the stability–instability transition at Si (111) during step bunching induced by electromigration. Surface Science, 440 (3). 407-419 doi:10.1016/s0039-6028(99)00817-1
Stoyanov, S. (2000) Scaling properties of step bunches formed on vicinal crystal surfaces during MBE growth. Surface Science, 464 (1). doi:10.1016/s0039-6028(00)00701-9
Hwang, Gyeong S. (2000) A channel for dimer flipping on the Si(001) surface. Surface Science, 465 (3). doi:10.1016/s0039-6028(00)00757-3
Metois, J.J., Heyraud, J.C., Stoyanov, S. (2001) Step flow growth of vicinal (111)Si surface at high temperatures: step kinetics or surface diffusion control. Surface Science, 486 (1). 95-102 doi:10.1016/s0039-6028(01)01019-6
Alfonso, C., Bermond, J.M., Heyraud, J.C., Métois, J.J. (1992) The meandering of steps and the terrace width distribution on clean Si(111). Surface Science, 262 (3). 371-381 doi:10.1016/0039-6028(92)90133-q
Wang, Z.M., Däweritz, L., Ploog, K.H. (2000) Controllable step bunching induced by Si deposition on the vicinal GaAs(001) surface. Surface Science, 459 (3). doi:10.1016/s0039-6028(00)00514-8
Métois, J.J., Heyraud, J.C. (2000) Silicon (001), an atypical low index surface. Surface Science, 446 (3). doi:10.1016/s0039-6028(99)01129-2
Slezák, J., Mutombo, P., Cháb, V. (2000) Temperature study of phase coexistence in the system Pb on an Si(111) surface. Surface Science, 454. 584-590 doi:10.1016/s0039-6028(00)00273-9
Suvanto, S., Hirva, P., Pakkanen, T.A. (2000) Interaction of Co(CO)x with surface sites of SiO2: theoretical study. Surface Science, 465 (3). 277-285 doi:10.1016/s0039-6028(00)00713-5
Kenny, S.D., Goldfarb, I., Akhmatskaya, E., Briggs, G.A.D. (2000) Surface reconstructions on the (100) CoSi2 surface. Surface Science, 465 (3). 259-265 doi:10.1016/s0039-6028(00)00683-x
Heyraud, J.C., Métois, J.J. (1983) Equilibrium shape and temperature; Lead on graphite. Surface Science, 128 (2). 334-342 doi:10.1016/s0039-6028(83)80036-3
 
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