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Nagai, Takehiko, Kaneko, Tetsuya, Liu, Zhengxin, Turkevych, Ivan, Kondo, Michio (2012) Improvement of photoconductivity in Silicon Tin (SiSn) thin films. Journal of Non-Crystalline Solids, 358 (17) 2281-2284 doi:10.1016/j.jnoncrysol.2011.12.096

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Reference TypeJournal (article/letter/editorial)
TitleImprovement of photoconductivity in Silicon Tin (SiSn) thin films
JournalJournal of Non-Crystalline Solids
AuthorsNagai, TakehikoAuthor
Kaneko, TetsuyaAuthor
Liu, ZhengxinAuthor
Turkevych, IvanAuthor
Kondo, MichioAuthor
Year2012 (September)Volume358
Issue17
PublisherElsevier BV
DOIdoi:10.1016/j.jnoncrysol.2011.12.096Search in ResearchGate
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Mindat Ref. ID648753Long-form Identifiermindat:1:5:648753:3
GUID0
Full ReferenceNagai, Takehiko, Kaneko, Tetsuya, Liu, Zhengxin, Turkevych, Ivan, Kondo, Michio (2012) Improvement of photoconductivity in Silicon Tin (SiSn) thin films. Journal of Non-Crystalline Solids, 358 (17) 2281-2284 doi:10.1016/j.jnoncrysol.2011.12.096
Plain TextNagai, Takehiko, Kaneko, Tetsuya, Liu, Zhengxin, Turkevych, Ivan, Kondo, Michio (2012) Improvement of photoconductivity in Silicon Tin (SiSn) thin films. Journal of Non-Crystalline Solids, 358 (17) 2281-2284 doi:10.1016/j.jnoncrysol.2011.12.096
In(2012, September) Journal of Non-Crystalline Solids Vol. 358 (17) Elsevier BV

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