Reference Type | Journal (article/letter/editorial) |
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Title | Quantification of amorphous SiC: H films using XPS and AES with three standards |
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Journal | Surface and Interface Analysis |
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Authors | Fitzgerald, A. G. | Author |
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Henderson, A. E. | Author |
Hicks, S. E. | Author |
Moir, P. A. | Author |
Storey, B. E. | Author |
Year | 1989 (June) | Volume | 14 |
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Issue | 6 |
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Publisher | Wiley |
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DOI | doi:10.1002/sia.740140614Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 6502240 | Long-form Identifier | mindat:1:5:6502240:3 |
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GUID | 0 |
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Full Reference | Fitzgerald, A. G., Henderson, A. E., Hicks, S. E., Moir, P. A., Storey, B. E. (1989) Quantification of amorphous SiC: H films using XPS and AES with three standards. Surface and Interface Analysis, 14 (6). 376-380 doi:10.1002/sia.740140614 |
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Plain Text | Fitzgerald, A. G., Henderson, A. E., Hicks, S. E., Moir, P. A., Storey, B. E. (1989) Quantification of amorphous SiC: H films using XPS and AES with three standards. Surface and Interface Analysis, 14 (6). 376-380 doi:10.1002/sia.740140614 |
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In | (1989, June) Surface and Interface Analysis Vol. 14 (6) Wiley |
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