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Xue, Chengshan, Wu, Yuxin, Zhuang, Huizhao, Tian, Deheng, Liu, Yi’an, He, Jianting, Ai, Yujie, Sun, Lili, Wang, Fuxue (2006) Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga2O3/BN films on Si substrate. Chinese Science Bulletin, 51 (14). 1662-1665 doi:10.1007/s11434-006-2042-z

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Reference TypeJournal (article/letter/editorial)
TitleFabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga2O3/BN films on Si substrate
JournalChinese Science Bulletin
AuthorsXue, ChengshanAuthor
Wu, YuxinAuthor
Zhuang, HuizhaoAuthor
Tian, DehengAuthor
Liu, Yi’anAuthor
He, JiantingAuthor
Ai, YujieAuthor
Sun, LiliAuthor
Wang, FuxueAuthor
Year2006 (July)Volume51
Issue14
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s11434-006-2042-zSearch in ResearchGate
Generate Citation Formats
Mindat Ref. ID7102738Long-form Identifiermindat:1:5:7102738:4
GUID0
Full ReferenceXue, Chengshan, Wu, Yuxin, Zhuang, Huizhao, Tian, Deheng, Liu, Yi’an, He, Jianting, Ai, Yujie, Sun, Lili, Wang, Fuxue (2006) Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga2O3/BN films on Si substrate. Chinese Science Bulletin, 51 (14). 1662-1665 doi:10.1007/s11434-006-2042-z
Plain TextXue, Chengshan, Wu, Yuxin, Zhuang, Huizhao, Tian, Deheng, Liu, Yi’an, He, Jianting, Ai, Yujie, Sun, Lili, Wang, Fuxue (2006) Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga2O3/BN films on Si substrate. Chinese Science Bulletin, 51 (14). 1662-1665 doi:10.1007/s11434-006-2042-z
In(2006, July) Chinese Science Bulletin Vol. 51 (14) Springer Science and Business Media LLC

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Wu, Yuxin, Xue, Chengshan, Zhuang, Huizhao, Tian, Deheng, Liu, Yi’an, He, Jianting, Sun, Lili, Wang, Fuxue, Ai, Yujie, Cao, Yuping (2006) Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering. Journal of Crystal Growth, 292 (2). 294-297 doi:10.1016/j.jcrysgro.2006.04.012
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