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Gaur, N. K. S., Bhandari, C. M., Verma, G. S. (1966) Temperature Dependence of Density-of-States Effective Mass and the Electronic and Phonon Contributions to Thermal Resistance of Doped Si-Ge Alloys at High Temperatures. Physical Review, 144 (2). 628-641 doi:10.1103/physrev.144.628

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Reference TypeJournal (article/letter/editorial)
TitleTemperature Dependence of Density-of-States Effective Mass and the Electronic and Phonon Contributions to Thermal Resistance of Doped Si-Ge Alloys at High Temperatures
JournalPhysical Review
AuthorsGaur, N. K. S.Author
Bhandari, C. M.Author
Verma, G. S.Author
Year1966 (April 15)Volume144
Issue2
PublisherAmerican Physical Society (APS)
DOIdoi:10.1103/physrev.144.628Search in ResearchGate
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Mindat Ref. ID7492728Long-form Identifiermindat:1:5:7492728:9
GUID0
Full ReferenceGaur, N. K. S., Bhandari, C. M., Verma, G. S. (1966) Temperature Dependence of Density-of-States Effective Mass and the Electronic and Phonon Contributions to Thermal Resistance of Doped Si-Ge Alloys at High Temperatures. Physical Review, 144 (2). 628-641 doi:10.1103/physrev.144.628
Plain TextGaur, N. K. S., Bhandari, C. M., Verma, G. S. (1966) Temperature Dependence of Density-of-States Effective Mass and the Electronic and Phonon Contributions to Thermal Resistance of Doped Si-Ge Alloys at High Temperatures. Physical Review, 144 (2). 628-641 doi:10.1103/physrev.144.628
In(1966, April) Physical Review Vol. 144 (2) American Physical Society (APS)

See Also

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Bhandari, Chandra Mohan, Verma, G. S. (1965) Thermal Conductivity of Ge-Si Alloys at High-Temperatures. Physical Review, 138 (1). doi:10.1103/physrev.138.a288
Gaur, N. K. S., Verma, G. S. (1967) Phonon-Electron Scattering inn-Type Ge at Low Temperatures. Physical Review, 159 (3). 610-624 doi:10.1103/physrev.159.610
Sood, K. C., Verma, G. S. (1973) Density-of-States Effective Mass of Current Carriers in Compensatedn−Ge. Physical Review B, 8 (2) 925-927 doi:10.1103/physrevb.8.925
Bhandari, C. M., Verma, G. S. (1966) Scattering of Magnons and Phonons in the Thermal Conductivity of Yttrium Iron Garnet. Physical Review, 152 (2). 731-736 doi:10.1103/physrev.152.731
Gaur, N.K.S. (1978) Phonon thermal conductivity of heavily doped hot-pressed n-type Si-Ge alloys at high temperatures. Physica B+C, 95 (1). 99-106 doi:10.1016/0378-4363(78)90013-x
Guthrie, G. L. (1966) Temperature Dependence of Three-Phonon Processes in Solids, with Application to Si, Ge, GaAs, and InSb. Physical Review, 152 (2). 801-807 doi:10.1103/physrev.152.801
Gaur, N.K.S. (1978) Phonon thermal conductivity of heavily doped hot-pressed p-type Si-Ge alloys at high temperatures. Physica B+C, 93 (2). 212-218 doi:10.1016/0378-4363(78)90127-4
Abeles, B., Beers, D. S., Cody, G. D., Dismukes, J. P. (1962) Thermal Conductivity of Ge-Si Alloys at High Temperatures. Physical Review, 125 (1). 44-46 doi:10.1103/physrev.125.44
Doniach, S. (1966) Theory of Low-Temperature Resistance Anomalies in Dilute Alloys. Physical Review, 144 (2). 382-389 doi:10.1103/physrev.144.382
Bhandari, C. M., Verma, G. S. (1968) Role of Longitudinal and Transverse Phonons in Lattice Thermal Conductivity of GaAs and InSb,. Physical Review, 176 (3). 1112 doi:10.1103/physrev.176.1112
Bhandari, C. M., Verma, G. S. (1965) Role of Longitudinal and Transverse Phonons in Lattice Thermal Conductivity of GaAs and InSb. Physical Review, 140 (6). doi:10.1103/physrev.140.a2101
 
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