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Li, Xueming, Yang, Size, Wu, Xingfang (2006) Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma. Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material, 13 (3). 272-276 doi:10.1016/s1005-8850(06)60057-1

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Reference TypeJournal (article/letter/editorial)
TitlePreparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma
JournalJournal of University of Science and Technology Beijing, Mineral, Metallurgy, Material
AuthorsLi, XuemingAuthor
Yang, SizeAuthor
Wu, XingfangAuthor
Year2006 (June)Volume13
Issue3
PublisherElsevier BV
DOIdoi:10.1016/s1005-8850(06)60057-1Search in ResearchGate
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Mindat Ref. ID7742487Long-form Identifiermindat:1:5:7742487:1
GUID0
Full ReferenceLi, Xueming, Yang, Size, Wu, Xingfang (2006) Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma. Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material, 13 (3). 272-276 doi:10.1016/s1005-8850(06)60057-1
Plain TextLi, Xueming, Yang, Size, Wu, Xingfang (2006) Preparation of silicon carbide nitride films on Si substrate by pulsed high-energy density plasma. Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material, 13 (3). 272-276 doi:10.1016/s1005-8850(06)60057-1
In(2006, June) Journal of University of Science and Technology Beijing, Mineral, Metallurgy, Material Vol. 13 (3) Elsevier BV

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