Reference Type | Journal (article/letter/editorial) |
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Title | Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy |
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Journal | MATERIALS TRANSACTIONS |
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Authors | Iwamoto, Chihiro | Author |
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Shen, Xu-Qiang | Author |
Okumura, Hajime | Author |
Matsuhata, Hirofumi | Author |
Ikuhara, Yuuichi | Author |
Year | 2002 | Volume | 43 |
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Issue | 7 |
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Publisher | Japan Institute of Metals |
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DOI | doi:10.2320/matertrans.43.1542Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 7776567 | Long-form Identifier | mindat:1:5:7776567:1 |
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GUID | 0 |
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Full Reference | Iwamoto, Chihiro, Shen, Xu-Qiang, Okumura, Hajime, Matsuhata, Hirofumi, Ikuhara, Yuuichi (2002) Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy. MATERIALS TRANSACTIONS, 43 (7). 1542-1546 doi:10.2320/matertrans.43.1542 |
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Plain Text | Iwamoto, Chihiro, Shen, Xu-Qiang, Okumura, Hajime, Matsuhata, Hirofumi, Ikuhara, Yuuichi (2002) Structure Analysis of GaN Thin Film with Inversion Domains by High Voltage Atomic Resolution Microscopy. MATERIALS TRANSACTIONS, 43 (7). 1542-1546 doi:10.2320/matertrans.43.1542 |
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In | (2002) MATERIALS TRANSACTIONS Vol. 43 (7) Japan Institute of Metals |
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