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Tsukimoto, Susumu, Ito, Kazuhiro, Wang, Zhongchang, Saito, Mitsuhiro, Ikuhara, Yuichi, Murakami, Masanori (2009) Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC. MATERIALS TRANSACTIONS, 50 (5). 1071-1075 doi:10.2320/matertrans.mc200831

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Reference TypeJournal (article/letter/editorial)
TitleGrowth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC
JournalMATERIALS TRANSACTIONS
AuthorsTsukimoto, SusumuAuthor
Ito, KazuhiroAuthor
Wang, ZhongchangAuthor
Saito, MitsuhiroAuthor
Ikuhara, YuichiAuthor
Murakami, MasanoriAuthor
Year2009Volume50
Issue5
PublisherJapan Institute of Metals
DOIdoi:10.2320/matertrans.mc200831Search in ResearchGate
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Mindat Ref. ID7780235Long-form Identifiermindat:1:5:7780235:2
GUID0
Full ReferenceTsukimoto, Susumu, Ito, Kazuhiro, Wang, Zhongchang, Saito, Mitsuhiro, Ikuhara, Yuichi, Murakami, Masanori (2009) Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC. MATERIALS TRANSACTIONS, 50 (5). 1071-1075 doi:10.2320/matertrans.mc200831
Plain TextTsukimoto, Susumu, Ito, Kazuhiro, Wang, Zhongchang, Saito, Mitsuhiro, Ikuhara, Yuichi, Murakami, Masanori (2009) Growth and Microstructure of Epitaxial Ti3SiC2 Contact Layers on SiC. MATERIALS TRANSACTIONS, 50 (5). 1071-1075 doi:10.2320/matertrans.mc200831
In(2009) MATERIALS TRANSACTIONS Vol. 50 (5) Japan Institute of Metals

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Wang, Zhongchang, Tsukimoto, Susumu, Saito, Mitsuhiro, Ito, Kazuhiro, Murakami, Masanori, Ikuhara, Yuichi (2009) Ohmic contacts on silicon carbide: The first monolayer and its electronic effect. Physical Review B, 80 (24) doi:10.1103/physrevb.80.245303
Wang, Zhongchang, Tsukimoto, Susumu, Saito, Mitsuhiro, Ikuhara, Yuichi (2009) SiC/Ti3SiC2interface: Atomic structure, energetics, and bonding. Physical Review B, 79 (4) doi:10.1103/physrevb.79.045318
Wang, Zhongchang, Tsukimoto, Susumu, Sun, Rong, Saito, Mitsuhiro, Ikuhara, Yuichi (2011) Atomic-scale Ti3SiC2 bilayers embedded in SiC: Formation of point Fermi surface. Applied Physics Letters, 98 (10). 104101pp. doi:10.1063/1.3560505
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