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Nitta, Noriko, Hasegawa, Tokiya, Yasuda, Hidehiro, Hayashi, Yoshihiko, Yoshiie, Toshimasa, Taniwaki, Masafumi (2011) Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature. MATERIALS TRANSACTIONS, 52 (2). 127-129 doi:10.2320/matertrans.m2010248

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Reference TypeJournal (article/letter/editorial)
TitleFormation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature
JournalMATERIALS TRANSACTIONS
AuthorsNitta, NorikoAuthor
Hasegawa, TokiyaAuthor
Yasuda, HidehiroAuthor
Hayashi, YoshihikoAuthor
Yoshiie, ToshimasaAuthor
Taniwaki, MasafumiAuthor
Year2011Volume52
Issue2
PublisherJapan Institute of Metals
DOIdoi:10.2320/matertrans.m2010248Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID7780976Long-form Identifiermindat:1:5:7780976:2
GUID0
Full ReferenceNitta, Noriko, Hasegawa, Tokiya, Yasuda, Hidehiro, Hayashi, Yoshihiko, Yoshiie, Toshimasa, Taniwaki, Masafumi (2011) Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature. MATERIALS TRANSACTIONS, 52 (2). 127-129 doi:10.2320/matertrans.m2010248
Plain TextNitta, Noriko, Hasegawa, Tokiya, Yasuda, Hidehiro, Hayashi, Yoshihiko, Yoshiie, Toshimasa, Taniwaki, Masafumi (2011) Formation of Defect Structure on Ge Surface by Ion Irradiation at Controlled Substrate Temperature. MATERIALS TRANSACTIONS, 52 (2). 127-129 doi:10.2320/matertrans.m2010248
In(2011) MATERIALS TRANSACTIONS Vol. 52 (2) Japan Institute of Metals

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Nitta, Noriko, Hasegawa, Tokiya, Yasuda, Hidehiro, Hayashi, Yoshihiko, Yoshiie, Toshimasa, Taniwaki, Masafumi, Mori, Hirotaro (2010) Void Formation and Structure Change Induced by Heavy Ion Irradiation in GaSb and InSb. MATERIALS TRANSACTIONS, 51 (6). 1059-1063 doi:10.2320/matertrans.m2010037
Nitta, Noriko, Taniwaki, Masafumi, Suzuki, Tomoo, Hayashi, Yoshihiko, Satoh, Yuhki, Yoshiie, Toshimasa (2002) Formation of Anomalous Defect Structure on GaSb Surface by Low Temperature Sn Ion-Implantation. MATERIALS TRANSACTIONS, 43 (4). 674-680 doi:10.2320/matertrans.43.674
Nitta, Noriko, Taniwaki, Masafumi, Hayashi, Yoshihiko, Yoshiie, Toshimasa (2002) Formation of cellular defect structure on GaSb ion-implanted at low temperature. Journal of Applied Physics, 92 (4). 1799-1802 doi:10.1063/1.1493662
Nitta, Noriko, Ohoka, Yukari, Sato, Koichi, Xu, Qiu, Hayashi, Yoshihiko, Yoshiie, Toshimasa, Taniwaki, Masafumi (2008) Surface Sink Effects on Void Formation in GaSb and InSb under Ion Irradiation. MATERIALS TRANSACTIONS, 49 (7). 1546-1549 doi:10.2320/matertrans.mbw200729
Nitta, Noriko, Taniwaki, Masafumi, Suzuki, Tomoo, Hayashi, Yoshihiko, Satoh, Yuhki, Yoshiie, Toshimasa (2000) Anomalous Defect Structure Formed on GaSb Surface by Low Temperature Sn Ion-Implantation and Its Formation Mechanism. Journal of the Japan Institute of Metals, 64 (12). 1141-1147 doi:10.2320/jinstmet1952.64.12_1141
Nitta, Noriko, Taniwaki, Masafumi (2004) Self-Organized Formation of Cellular Structure on Semiconductors by Ion-Implantation. Materia Japan, 43 (12). 1014 doi:10.2320/materia.43.1014
Dang, Giang T., Kawaharamura, Toshiyuki, Nitta, Noriko, Hirao, Takashi, Yoshiie, Toshimasa, Taniwaki, Masafumi (2011) Photoluminescence, morphology, and structure of hydrothermal ZnO implanted at room temperature with 60 keV Sn+ ions. Journal of Applied Physics, 109 (12). 123516pp. doi:10.1063/1.3598068
Taniwaki, Masafumi, Nitta, Noriko (2008) Fabrication of Nano-cell Structure Utilizing Point Defects Induced by Ion Irradiation. Materia Japan, 47 (12). 637 doi:10.2320/materia.47.637
Morita, Kenji, Nitta, Noriko, Taniwaki, Masafumi (2013) Fabrication of Ordered Nano-Cell Structure on Ge Surface by Focused Ion Beam. Journal of the Japan Institute of Metals, 77 (3). 64-69 doi:10.2320/jinstmet.77.64
Taniwaki, Masafumi, Yoshiie, Toshimasa, Koide, Hideto, Ichihashi, Motomi, Yoshimoto, Naoto, Yoshida, Hiroyuki, Hayashi, Yoshihiko (1989) Microtwin formation in gallium arsenide by iron ion implantation and amorphization by annealing. Journal of Applied Physics, 66 (1). 161-164 doi:10.1063/1.343897
Nitta, Noriko (2013) Formation of Nano-structure on Semiconductor Surface by Ion Irradiation. Materia Japan, 52 (4). 166-172 doi:10.2320/materia.52.166
 
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