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Fang, Yih, Chen, Show-An, Chu, M.L. (1992) Effect of side-chain length on rectification and photovoltaic characteristics of poly(3-alkylthiophene) Schottky barriers. Synthetic Metals, 52 (3). 261-272 doi:10.1016/0379-6779(92)90026-f

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Reference TypeJournal (article/letter/editorial)
TitleEffect of side-chain length on rectification and photovoltaic characteristics of poly(3-alkylthiophene) Schottky barriers
JournalSynthetic Metals
AuthorsFang, YihAuthor
Chen, Show-AnAuthor
Chu, M.L.Author
Year1992 (October)Volume52
Issue3
PublisherElsevier BV
DOIdoi:10.1016/0379-6779(92)90026-fSearch in ResearchGate
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Mindat Ref. ID7788673Long-form Identifiermindat:1:5:7788673:4
GUID0
Full ReferenceFang, Yih, Chen, Show-An, Chu, M.L. (1992) Effect of side-chain length on rectification and photovoltaic characteristics of poly(3-alkylthiophene) Schottky barriers. Synthetic Metals, 52 (3). 261-272 doi:10.1016/0379-6779(92)90026-f
Plain TextFang, Yih, Chen, Show-An, Chu, M.L. (1992) Effect of side-chain length on rectification and photovoltaic characteristics of poly(3-alkylthiophene) Schottky barriers. Synthetic Metals, 52 (3). 261-272 doi:10.1016/0379-6779(92)90026-f
In(1992, October) Synthetic Metals Vol. 52 (3) Elsevier BV

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Chen, Show-An, Fang, Yih (1993) Polyaniline schottky barrier: effect of doping on rectification and photovoltaic characteristics. Synthetic Metals, 60 (3). 215-222 doi:10.1016/0379-6779(93)91282-7
Shin, Chong-Kyu, Lee, Hoosung (2004) Effect of alkyl side-chain length and solvent on the luminescent characteristics of poly(3-n-alkylthiophene). Synthetic Metals, 140 (2). 177-181 doi:10.1016/s0379-6779(03)00361-8
Chen, Show-An, Liao, Chien-Shiun (1993) Conductivity relaxation of poly(3-alkylthiophene)s. Synthetic Metals, 57 (2). 4936-4943 doi:10.1016/0379-6779(93)90842-k
Chen, Show-An, Ni, Jui-Ming (1993) Conformational defects in poly(3-alkylthiophene)s and their copolymers. Synthetic Metals, 55 (1). 576-581 doi:10.1016/0379-6779(93)90994-8
Yih, Fang, Show-An, Chen (1992) Studies on aluminum/poly(3-octylthiophene)/indium-tin oxide Schottky barrier electronic device: rectification property and its temperature dependence. Materials Chemistry and Physics, 32. 380-385 doi:10.1016/0254-0584(92)90184-a
Čík, G., Šeršeň, F., Dlháň, L., Szabo, L., Bartuš, J. (1995) Anomaly in magnetic properties of poly(3-alkylthiophene)s depending on alkyl chain length. Synthetic Metals, 75 (1). 43-48 doi:10.1016/0379-6779(95)03381-s
Tashiro, Kohji, Minagawa, Yasuhisa, Kobayashi, Masamichi, Morita, Shigenori, Kawai, Tsuyoshi, Yoshino, Katsumi (1993) Structure and thermochromic solid-state phase transition of poly(3-alkylthiophene): [3] effects of alkyl side chain length on the phase transitional behavior. Synthetic Metals, 55 (1). 321-328 doi:10.1016/0379-6779(93)90952-s
Ohmori, Yutaka, Muro, Keiro, Yoshino, Katsumi (1993) Gas-sensitive and temperature-dependent Schottky gated field effect transistors utilizing poly(3-alkylthiophene)s. Synthetic Metals, 57 (1). 4111-4116 doi:10.1016/0379-6779(93)90566-f
Yoshino, Katsumi, Morita, Shigenori, Sugimoto, Ryuichi (1992) Gel chromism and anomalous luminescence in poly(3-alkylthiophene). Synthetic Metals, 50 (1). 491-497 doi:10.1016/0379-6779(92)90204-v
Chen, Show-An, Fang, Yih, Lee, Hsun-Tsing (1993) Polyacrylic acid-doped polyaniline as p-type semiconductor in Schottky barrier electronic device. Synthetic Metals, 57 (1). 4082-4086 doi:10.1016/0379-6779(93)90561-a
Binh, N.T., Gailberger, M., Bässler, H. (1992) Photoconduction in poly(3-alkylthiophene) I. Charge carrier generation. Synthetic Metals, 47 (1). 77-86 doi:10.1016/0379-6779(92)90333-e
 
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