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Scheinert, S., Paasch, G., Lindner, T. (2003) Relevance of organic field effect transistor models: Simulation vs. experiment. Synthetic Metals, 137 (1). 1451-1452 doi:10.1016/s0379-6779(02)01176-1

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Reference TypeJournal (article/letter/editorial)
TitleRelevance of organic field effect transistor models: Simulation vs. experiment
JournalSynthetic Metals
AuthorsScheinert, S.Author
Paasch, G.Author
Lindner, T.Author
Year2003 (April)Volume137
Issue1
PublisherElsevier BV
DOIdoi:10.1016/s0379-6779(02)01176-1Search in ResearchGate
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Mindat Ref. ID7798110Long-form Identifiermindat:1:5:7798110:9
GUID0
Full ReferenceScheinert, S., Paasch, G., Lindner, T. (2003) Relevance of organic field effect transistor models: Simulation vs. experiment. Synthetic Metals, 137 (1). 1451-1452 doi:10.1016/s0379-6779(02)01176-1
Plain TextScheinert, S., Paasch, G., Lindner, T. (2003) Relevance of organic field effect transistor models: Simulation vs. experiment. Synthetic Metals, 137 (1). 1451-1452 doi:10.1016/s0379-6779(02)01176-1
In(2003, April) Synthetic Metals Vol. 137 (1) Elsevier BV

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Choi, T.Y., Kang, H.S., Park, D.H., Koo, J.M., Lee, J.K., Ahn, S.D., Joo, J. (2003) Trap Distribution and Field Effect Transistor (FET) of Perylene by Organic Molecular Beam Deposition (OMBD). Synthetic Metals, 137 (1). 929-930 doi:10.1016/s0379-6779(02)01187-6
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