Yoshigoe, Akitaka, Hirano, Shinya, Urisu, Tsuneo (1998) Surface hydrogen and growth mechanisms of synchrotron radiation-assisted silicon gas source molecular beam epitaxy using disilane. Applied Organometallic Chemistry, 12 (4). 253-256 doi:10.1002/(sici)1099-0739(199804)12:4<253::aid-aoc701>3.0.co;2-n
Reference Type | Journal (article/letter/editorial) | ||
---|---|---|---|
Title | Surface hydrogen and growth mechanisms of synchrotron radiation-assisted silicon gas source molecular beam epitaxy using disilane | ||
Journal | Applied Organometallic Chemistry | ||
Authors | Yoshigoe, Akitaka | Author | |
Hirano, Shinya | Author | ||
Urisu, Tsuneo | Author | ||
Year | 1998 (April) | Volume | 12 |
Issue | 4 | ||
Publisher | Wiley | ||
DOI | doi:10.1002/(sici)1099-0739(199804)12:4<253::aid-aoc701>3.0.co;2-nSearch in ResearchGate | ||
Generate Citation Formats | |||
Mindat Ref. ID | 7841221 | Long-form Identifier | mindat:1:5:7841221:7 |
GUID | 0 | ||
Full Reference | Yoshigoe, Akitaka, Hirano, Shinya, Urisu, Tsuneo (1998) Surface hydrogen and growth mechanisms of synchrotron radiation-assisted silicon gas source molecular beam epitaxy using disilane. Applied Organometallic Chemistry, 12 (4). 253-256 doi:10.1002/(sici)1099-0739(199804)12:4<253::aid-aoc701>3.0.co;2-n | ||
Plain Text | Yoshigoe, Akitaka, Hirano, Shinya, Urisu, Tsuneo (1998) Surface hydrogen and growth mechanisms of synchrotron radiation-assisted silicon gas source molecular beam epitaxy using disilane. Applied Organometallic Chemistry, 12 (4). 253-256 doi:10.1002/(sici)1099-0739(199804)12:43.0.co;2-n | ||
In | (1998, April) Applied Organometallic Chemistry Vol. 12 (4) Wiley |
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