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Gao, Hui, Wang, Heyi, Yuan, Yonggang (2012) Radiation-induced defects in different silicon (111) wafers by 400 keV electron irradiation. Rare Metals, 31. 290-295 doi:10.1007/s12598-012-0508-5

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Reference TypeJournal (article/letter/editorial)
TitleRadiation-induced defects in different silicon (111) wafers by 400 keV electron irradiation
JournalRare Metals
AuthorsGao, HuiAuthor
Wang, HeyiAuthor
Yuan, YonggangAuthor
Year2012 (June)Volume31
PublisherSpringer Science and Business Media LLC
DOIdoi:10.1007/s12598-012-0508-5Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8049348Long-form Identifiermindat:1:5:8049348:2
GUID0
Full ReferenceGao, Hui, Wang, Heyi, Yuan, Yonggang (2012) Radiation-induced defects in different silicon (111) wafers by 400 keV electron irradiation. Rare Metals, 31. 290-295 doi:10.1007/s12598-012-0508-5
Plain TextGao, Hui, Wang, Heyi, Yuan, Yonggang (2012) Radiation-induced defects in different silicon (111) wafers by 400 keV electron irradiation. Rare Metals, 31. 290-295 doi:10.1007/s12598-012-0508-5
In(2012) Rare Metals Vol. 31. Springer Science and Business Media LLC

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