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INOUE, ZENZABURO, INOMATA, YOSHIZO, TANAKA, HIROKICHI (1972) A NEW POLYTYPE OF SILICON CARBIDE, 45R, AND ITS STRUCTURE ANALYSIS ACCORDING TO A SIMPLE ASSUMPTION NEWLY INTRODUCED. Mineralogical Journal, 6 (6) 486-497 doi:10.2465/minerj1953.6.486

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Reference TypeJournal (article/letter/editorial)
TitleA NEW POLYTYPE OF SILICON CARBIDE, 45R, AND ITS STRUCTURE ANALYSIS ACCORDING TO A SIMPLE ASSUMPTION NEWLY INTRODUCED
JournalMineralogical Journal
AuthorsINOUE, ZENZABUROAuthor
INOMATA, YOSHIZOAuthor
TANAKA, HIROKICHIAuthor
Year1972Volume6
Issue6
PublisherJapan Association of Mineralogical Sciences
Download URLhttps://www.jstage.jst.go.jp/article/minerj1953/6/6/6_6_486/_pdf
DOIdoi:10.2465/minerj1953.6.486Search in ResearchGate
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Mindat Ref. ID81461Long-form Identifiermindat:1:5:81461:0
GUID0
Full ReferenceINOUE, ZENZABURO, INOMATA, YOSHIZO, TANAKA, HIROKICHI (1972) A NEW POLYTYPE OF SILICON CARBIDE, 45R, AND ITS STRUCTURE ANALYSIS ACCORDING TO A SIMPLE ASSUMPTION NEWLY INTRODUCED. Mineralogical Journal, 6 (6) 486-497 doi:10.2465/minerj1953.6.486
Plain TextINOUE, ZENZABURO, INOMATA, YOSHIZO, TANAKA, HIROKICHI (1972) A NEW POLYTYPE OF SILICON CARBIDE, 45R, AND ITS STRUCTURE ANALYSIS ACCORDING TO A SIMPLE ASSUMPTION NEWLY INTRODUCED. Mineralogical Journal, 6 (6) 486-497 doi:10.2465/minerj1953.6.486
In(1972) Mineralogical Journal Vol. 6 (6) Japan Association of Mineralogical Sciences

See Also

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Inoue, Zenzaburo, Inomata, Yoshizo, Tanaka, Hidehiko, Kawabata, Haruo (1980) A new phase of aluminium silicon carbide, Al4Si2C5. Journal of Materials Science, 15. 255-256 doi:10.1007/bf00552455
Inoue, Zenzaburo, Inomata, Yoshizo, Tanaka, Hirokichi, Komatsu, Hiroshi (1982) A simplified method of generating layer sequences for SiC polytypes. Journal of Materials Science, 17. 3197-3203 doi:10.1007/bf01203483
Inoue, Zenzaburo, Inomata, Yoshizo, Tanaka, Hidehiko, Kawabata, Haruo (1980) X-ray crystallographic data on aluminum silicon carbide, ?-Al4SiC4 and Al4Si2C5. Journal of Materials Science, 15. 575-580 doi:10.1007/bf00551719
Inoue, Zenzaburo, Tanaka, Hidehiko, Inomata, Yoshizo (1980) Synthesis and X-ray crystallography of aluminium boron carbide, Al8B4C7. Journal of Materials Science, 15. 3036-3040 doi:10.1007/bf00550372
Inoue, Zenzaburo, Inomata, Yoshizo (1980) Thermal stability of the long-period polytype of SiC, 51R, at 2500°C. Journal of Crystal Growth, 50 (4). 779-782 doi:10.1016/0022-0248(80)90139-6
KATO, KATSUO, INOUE, ZENZABURO, KIJIMA, KAZUNORI, KAWADA, ISAO, TANAKA, HIROKICHI, YAMANE, TSUNEKO (1975) ChemInform Abstract: STRUCTURAL APPROACH TO THE PROBLEM OF OXYGEN CONTENT IN ALPHA SILICON NITRIDE. Chemischer Informationsdienst, 6 (24) doi:10.1002/chin.197524003
Inoue, Z., Sueno, S., Tagai, T., Inomata, Y. (1971) A new polytype of silicon carbide 9T. Journal of Crystal Growth, 8 (2). 179-183 doi:10.1016/0022-0248(71)90139-4
Inoue, Zenzaburo, Uemura, Yoichiro, Inomata, Yoshizo (1981) A SiC bicrystal junction on the (0 0 0 1) plane. Journal of Materials Science, 16. 2297-2302 doi:10.1007/bf00542394
KATO, KATSUO, INOUE, ZENZABURO, KIJIMA, KAZUNORI, KAWADA, ISAO, TANAKA, HIROKICHI, YAMANE, TSUNEKO (1975) Structural Approach to the Problem of Oxygen Content in Alpha Silicon Nitride. Journal of the American Ceramic Society, 58 (3). 90-91 doi:10.1111/j.1151-2916.1975.tb19564.x
FUJIKI, Yoshinori, ISHIZAWA, Yoshio, INOUE, Zenzaburo (1979) Growth of ZrS2 and NbS2 single crystals by chemical transport reactions. Mineralogical Journal, 9 (6) 339-348 doi:10.2465/minerj.9.339
Inoue, Zenzaburo (1985) A new role for nitrogen in silicon nitride and related ceramics. Journal of Materials Science Letters, 4 (6) 656-658 doi:10.1007/bf00726953
 
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