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Canali, C., Jacoboni, C., Ottaviani, G., Alberigi‐Quaranta, A. (1975) High‐field diffusion of electrons in silicon. Applied Physics Letters, 27 (5). 278-280 doi:10.1063/1.88465

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Reference TypeJournal (article/letter/editorial)
TitleHigh‐field diffusion of electrons in silicon
JournalApplied Physics Letters
AuthorsCanali, C.Author
Jacoboni, C.Author
Ottaviani, G.Author
Alberigi‐Quaranta, A.Author
Year1975 (September)Volume27
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.88465Search in ResearchGate
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Mindat Ref. ID8460413Long-form Identifiermindat:1:5:8460413:8
GUID0
Full ReferenceCanali, C., Jacoboni, C., Ottaviani, G., Alberigi‐Quaranta, A. (1975) High‐field diffusion of electrons in silicon. Applied Physics Letters, 27 (5). 278-280 doi:10.1063/1.88465
Plain TextCanali, C., Jacoboni, C., Ottaviani, G., Alberigi‐Quaranta, A. (1975) High‐field diffusion of electrons in silicon. Applied Physics Letters, 27 (5). 278-280 doi:10.1063/1.88465
In(1975, September) Applied Physics Letters Vol. 27 (5) AIP Publishing

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Canali, C., Jacoboni, C., Nava, F., Ottaviani, G., Alberigi-Quaranta, A. (1975) Electron drift velocity in silicon. Physical Review B, 12 (6) 2265-2284 doi:10.1103/physrevb.12.2265
Quaranta, A. Alberigi, Canali, C., Ottaviani, G. (1970) HOT‐HOLE ANISOTROPY IN SILICON. Applied Physics Letters, 16 (11). 432-433 doi:10.1063/1.1653055
Ottaviani, G., Canali, C., Jacoboni, C., Quaranta, A. Alberigi, Zanio, K. (1973) Hole mobility and Poole‐Frenkel effect in CdTe. Journal of Applied Physics, 44 (1). 360-371 doi:10.1063/1.1661888
Quaranta, A. Alberigi, Borsari, V., Jacoboni, C., Zanarini, G. (1973) Electron diffusion in CdTe. Applied Physics Letters, 22 (3). 103-105 doi:10.1063/1.1654567
Ottaviani, G., Reggiani, L., Canali, C., Nava, F., Alberigi-Quaranta, A. (1975) Hole drift velocity in silicon. Physical Review B, 12 (8) 3318-3329 doi:10.1103/physrevb.12.3318
Canali, C., Ottaviani, G., Alberigi Quaranta, A. (1971) Drift velocity of electrons and holes and associated anisotropic effects in silicon. Journal of Physics and Chemistry of Solids, 32. 1707-1720 doi:10.1016/s0022-3697(71)80137-3
Quaranta, A. Alberigi, Canali, C., Ottaviani, G., Taroni, A., Zanarini, G. (1970) Radial Resistivity Profile in High-Purity Silicon. IEEE Transactions on Nuclear Science, 17 (1) 66-71 doi:10.1109/tns.1970.4325562
Quaranta, A. Alberigi, Canali, C., Ottaviani, G. (1970) A 40 keV Pulsed Electron Accelerator. Review of Scientific Instruments, 41 (8). 1205-1213 doi:10.1063/1.1684761
Reggiani, L., Canali, C., Nava, F., Quaranta, A. Alberigi (1978) Diffusion coefficient of holes in Ge. Journal of Applied Physics, 49 (8). 4446-4452 doi:10.1063/1.325501
Ottaviani, G., Canali, C., Quaranta, A. Alberigi (1975) Charge Carrier Transport Properties of Semiconductor Materials Suitable for Nuclear Radiation Detectors. IEEE Transactions on Nuclear Science, 22 (1) 192-204 doi:10.1109/tns.1975.4327640
Canali, C., Martini, M., Ottaviani, G., Quaranta, A. Alberigi (1972) Measurements of the Average Energy Per Electron-Hole Pair Generation in Silicon between 5-320°K. IEEE Transactions on Nuclear Science, 19 (4) 9-19 doi:10.1109/tns.1972.4326778
 
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