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Nemirovsky, Y., Burstein, L. (1984) Anodic sulfide films on Hg1−xCdxTe. Applied Physics Letters, 44 (4). 443-444 doi:10.1063/1.94760

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Reference TypeJournal (article/letter/editorial)
TitleAnodic sulfide films on Hg1−xCdxTe
JournalApplied Physics Letters
AuthorsNemirovsky, Y.Author
Burstein, L.Author
Year1984 (February 15)Volume44
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.94760Search in ResearchGate
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Mindat Ref. ID8473478Long-form Identifiermindat:1:5:8473478:5
GUID0
Full ReferenceNemirovsky, Y., Burstein, L. (1984) Anodic sulfide films on Hg1−xCdxTe. Applied Physics Letters, 44 (4). 443-444 doi:10.1063/1.94760
Plain TextNemirovsky, Y., Burstein, L. (1984) Anodic sulfide films on Hg1−xCdxTe. Applied Physics Letters, 44 (4). 443-444 doi:10.1063/1.94760
In(1984, February) Applied Physics Letters Vol. 44 (4) AIP Publishing

See Also

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Nemirovsky, Y., Burstein, L., Kidron, I. (1985) Interface ofp‐type Hg1−xCdxTe passivated with native sulfides. Journal of Applied Physics, 58 (1). 366-373 doi:10.1063/1.335686
Ma, Zongfu, Li, Rui (1990) Thermal instability of anodic sulfide films on Hg1−xCdxTe. Applied Physics Letters, 56 (24). 2417-2418 doi:10.1063/1.103189
Nemirovsky, Y., Goshen, R. (1980) Plasma anodization of Hg1−xCdxTe. Applied Physics Letters, 37 (9). 813-815 doi:10.1063/1.92090
NEMIROVSKY, Y., FINKMAN, E. (1979) ChemInform Abstract: ANODIC OXIDE FILMS ON MERCURY CADMIUM TELLURIDE (HG1-XCDXTE) Chemischer Informationsdienst, 10 (36) doi:10.1002/chin.197936026
Nemirovsky, Y., Finkman, E. (1979) Intrinsic carrier concentration of Hg1−xCdxTe. Journal of Applied Physics, 50 (12). 8107-8111 doi:10.1063/1.325950
Finkman, E., Nemirovsky, Y. (1979) Infrared optical absorption of Hg1−xCdxTe. Journal of Applied Physics, 50 (6). 4356-4361 doi:10.1063/1.326421
Polla, D. L., Aggarwal, R. L. (1984) Below band‐gap photoluminescence of Hg1−xCdxTe. Applied Physics Letters, 44 (8). 775-776 doi:10.1063/1.94914
Finkman, E., Nemirovsky, Y. (1982) Two‐electron conduction inN‐type Hg1−xCdxTe. Journal of Applied Physics, 53 (2). 1052-1058 doi:10.1063/1.330515
Nemirovsky, Y., Margalit, S., Kidron, I. (1980) n‐channel insulated‐gate field‐effect transistors in Hg1−xCdxTe withx=0.215. Applied Physics Letters, 36 (6). 466-468 doi:10.1063/1.91509
Sand, E., Levy, D., Nemirovsky, Y. (1985) Combination of open‐tube vapor and liquid phase epitaxy of Hg1−xCdxTe. Applied Physics Letters, 46 (5). 501-503 doi:10.1063/1.95571
Shin, S. H., Pasko, J. G. (1984) Open‐tube isothermal vapor phase epitaxy of Hg1−xCdxTe on CdTe. Applied Physics Letters, 44 (4). 423-425 doi:10.1063/1.94796
 
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