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Stutzmann, M., Jackson, W. B., Tsai, C. C. (1984) Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon. Applied Physics Letters, 45 (10). 1075-1077 doi:10.1063/1.95020

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Reference TypeJournal (article/letter/editorial)
TitleKinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon
JournalApplied Physics Letters
AuthorsStutzmann, M.Author
Jackson, W. B.Author
Tsai, C. C.Author
Year1984 (November 15)Volume45
Issue10
PublisherAIP Publishing
DOIdoi:10.1063/1.95020Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8474013Long-form Identifiermindat:1:5:8474013:9
GUID0
Full ReferenceStutzmann, M., Jackson, W. B., Tsai, C. C. (1984) Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon. Applied Physics Letters, 45 (10). 1075-1077 doi:10.1063/1.95020
Plain TextStutzmann, M., Jackson, W. B., Tsai, C. C. (1984) Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon. Applied Physics Letters, 45 (10). 1075-1077 doi:10.1063/1.95020
In(1984, November) Applied Physics Letters Vol. 45 (10) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Jackson, W. B., Tsai, C. C., Stutzmann, M. (1989) Response to ‘‘Critique of (time)1/3kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’ ’’ [Appl. Phys. Lett.54, 398 (1989)]. Applied Physics Letters, 54 (4). 399-400 doi:10.1063/1.100975
Redfield, David (1989) Critique of (time)1/3kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett.45, 1075 (1984)]. Applied Physics Letters, 54 (4). 398-399 doi:10.1063/1.100974
Du, Mao-Hua, Zhang, S. B. (2005) Topological defects and the Staebler-Wronski effect in hydrogenated amorphous silicon. Applied Physics Letters, 87 (19). 191903pp. doi:10.1063/1.2130381
Stutzmann, M., Jackson, W. B., Tsai, C. C. (1986) Annealing of metastable defects in hydrogenated amorphous silicon. Physical Review B, 34 (1) 63-72 doi:10.1103/physrevb.34.63
Jackson, W. B., Stutzmann, M. (1986) Effect of temperature during illumination on annealing of metastable dangling bonds in hydrogenated amorphous silicon. Applied Physics Letters, 49 (15). 957-959 doi:10.1063/1.97494
Güneş, Mehmet, Wronski, Christopher R. (1997) Differences in the densities of charged defect states and kinetics of Staebler–Wronski effect in undoped (nonintrinsic) hydrogenated amorphous silicon thin films. Journal of Applied Physics, 81 (8). 3526-3536 doi:10.1063/1.365000
Amer, Nabil M., Skumanich, Andrew, Jackson, Warren B. (1983) The contribution of the staebler-wronski effect to gap-state absorption in hydrogenated amorphous silicon. Physica B+C, 117. 897-898 doi:10.1016/0378-4363(83)90687-3
Stutzmann, M., Jackson, W. B., Tsai, C. C. (1985) Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study. Physical Review B, 32 (1) 23-47 doi:10.1103/physrevb.32.23
Staebler, D. L., Wronski, C. R. (1980) Optically induced conductivity changes in discharge‐produced hydrogenated amorphous silicon. Journal of Applied Physics, 51 (6). 3262-3268 doi:10.1063/1.328084
Pinarbasi, Mustafa, Abelson, John R., Kushner, Mark J. (1990) Reduced Staebler–Wronski effect in reactively sputtered hydrogenated amorphous silicon thin films. Applied Physics Letters, 56 (17). 1685-1687 doi:10.1063/1.103117
Kounavis, P. (1995) Changes in the trapping and recombination process of hydrogenated amorphous silicon in the Staebler–Wronski effect. Journal of Applied Physics, 77 (8). 3872-3878 doi:10.1063/1.358565
 
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