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Fischer, R., Chand, N., Kopp, W., Morkoç, H., Erickson, L. P., Youngman, R. (1985) GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy. Applied Physics Letters, 47 (4). 397-399 doi:10.1063/1.96179

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Reference TypeJournal (article/letter/editorial)
TitleGaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy
JournalApplied Physics Letters
AuthorsFischer, R.Author
Chand, N.Author
Kopp, W.Author
Morkoç, H.Author
Erickson, L. P.Author
Youngman, R.Author
Year1985 (August 15)Volume47
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.96179Search in ResearchGate
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Mindat Ref. ID8476487Long-form Identifiermindat:1:5:8476487:4
GUID0
Full ReferenceFischer, R., Chand, N., Kopp, W., Morkoç, H., Erickson, L. P., Youngman, R. (1985) GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy. Applied Physics Letters, 47 (4). 397-399 doi:10.1063/1.96179
Plain TextFischer, R., Chand, N., Kopp, W., Morkoç, H., Erickson, L. P., Youngman, R. (1985) GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy. Applied Physics Letters, 47 (4). 397-399 doi:10.1063/1.96179
In(1985, August) Applied Physics Letters Vol. 47 (4) AIP Publishing

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Chand, N., Klem, J., Morkoç, H. (1986) PnpGaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot‐electron transistors. Applied Physics Letters, 48 (7). 484-486 doi:10.1063/1.96483
Agarwala, S., Won, T., Morkoç, H. (1989) AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy. Applied Physics Letters, 54 (12). 1151-1153 doi:10.1063/1.100745
Chand, Naresh, Fischer, Russ, Morkoç, Hadis (1985) Collector‐emitter offset voltage in AlGaAs/GaAs heterojunction bipolar transistors. Applied Physics Letters, 47 (3). 313-315 doi:10.1063/1.96203
Su, S. L., Fischer, R., Lyons, W. G., Tejayadi, O., Arnold, D., Klem, J., Morkoç, H. (1983) Double heterojunction GaAs/AlxGa1−xAs bipolar transistors prepared by molecular beam epitaxy. Journal of Applied Physics, 54 (11). 6725-6731 doi:10.1063/1.331860
Klem, J., Peng, C. K., Henderson, T., Morkoç, H., Otsuka, N., Choi, C., Yu, P. W. (1985) GaAs/GaAs1−ySbystrained‐layer superlattices grown by molecular beam epitaxy. Applied Physics Letters, 47 (8). 885-887 doi:10.1063/1.95965
Adomi, K., Strite, S., Morkoç, H. (1990) Antiphase‐domain‐free GaAs grown on pseudomorphic Si (100) surfaces by molecular beam epitaxy. Applied Physics Letters, 56 (5). 469-471 doi:10.1063/1.102768
Henderson, T., Kopp, W., Fischer, R., Klem, J., Morkoç, H., Erickson, L. P., Palmberg, P. W. (1984) Large capacity As2 source for molecular beam epitaxy. Review of Scientific Instruments, 55 (11). 1763-1766 doi:10.1063/1.1137654
Masselink, W. T., Henderson, T., Klem, J., Fischer, R., Pearah, P., Morkoç, H., Hafich, M., Wang, P. D., Robinson, G. Y. (1984) Optical properties of GaAs on (100) Si using molecular beam epitaxy. Applied Physics Letters, 45 (12). 1309-1311 doi:10.1063/1.95130
Chand, Naresh, Henderson, Tim, Fischer, Russ, Kopp, William, Morkoç, Hadis, Giacoletto, Lawrence J. (1985) ApnpAlGaAs/GaAs heterojunction bipolar transistor. Applied Physics Letters, 46 (3). 302-304 doi:10.1063/1.95666
Fischer, R., Morkoç, H., Neumann, D. A., Zabel, H., Choi, C., Otsuka, N., Longerbone, M., Erickson, L. P. (1986) Material properties of high‐quality GaAs epitaxial layers grown on Si substrates. Journal of Applied Physics, 60 (5). 1640-1647 doi:10.1063/1.337253
Huang, D., Agarwala, S., Morkoç, H. (1989) Photoluminescence studies of GaAs grown on InP substrates by molecular beam epitaxy. Applied Physics Letters, 54 (1). 51-53 doi:10.1063/1.100832
 
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