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Gavrilovic, P., Meehan, K., Guido, L. J., Holonyak, N., Eu, V., Feng, M., Burnham, R. D. (1985) Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 47 (9). 903-905 doi:10.1063/1.95973

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Reference TypeJournal (article/letter/editorial)
TitleSi‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers
JournalApplied Physics Letters
AuthorsGavrilovic, P.Author
Meehan, K.Author
Guido, L. J.Author
Holonyak, N.Author
Eu, V.Author
Feng, M.Author
Burnham, R. D.Author
Year1985 (November)Volume47
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.95973Search in ResearchGate
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Mindat Ref. ID8476908Long-form Identifiermindat:1:5:8476908:2
GUID0
Full ReferenceGavrilovic, P., Meehan, K., Guido, L. J., Holonyak, N., Eu, V., Feng, M., Burnham, R. D. (1985) Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 47 (9). 903-905 doi:10.1063/1.95973
Plain TextGavrilovic, P., Meehan, K., Guido, L. J., Holonyak, N., Eu, V., Feng, M., Burnham, R. D. (1985) Si‐implanted and disordered stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers. Applied Physics Letters, 47 (9). 903-905 doi:10.1063/1.95973
In(1985, November) Applied Physics Letters Vol. 47 (9) AIP Publishing

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Gavrilovic, P., Meehan, K., Epler, J. E., Holonyak, N., Burnham, R. D., Thornton, R. L., Streifer, W. (1985) Impurity‐disordered, coupled‐stripe AlxGa1−xAs‐GaAs quantum well laser. Applied Physics Letters, 46 (9). 857-859 doi:10.1063/1.95864
Gavrilovic, P., Gavrilovic, J., Meehan, K., Kaliski, R. W., Guido, L. J., Holonyak, N., Hess, K., Burnham, R. D. (1985) Si‐Si pair diffusion and correlation in AlxGa1−xAs and GaAs. Applied Physics Letters, 47 (7). 710-712 doi:10.1063/1.96067
Meehan, K., Gavrilović, P., Holonyak, N., Burnham, R. D., Thornton, R. L. (1985) Stripe‐geometry AlxGa1−xAs‐GaAs quantum well heterostructure lasers defined by Si diffusion and disordering. Applied Physics Letters, 46 (1). 75-77 doi:10.1063/1.95859
Deppe, D. G., Guido, L. J., Holonyak, N., Hsieh, K. C., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1986) Stripe‐geometry quantum well heterostructure AlxGa1−xAs‐GaAs lasers defined by defect diffusion. Applied Physics Letters, 49 (9). 510-512 doi:10.1063/1.97133
Meehan, K., Gavrilovic, P., Epler, J. E., Hsieh, K. C., Holonyak, N., Burnham, R. D., Thornton, R. L., Streifer, W. (1985) Donor‐induced disorder‐defined buried‐heterostructure AlxGa1−xAs‐GaAs quantum‐well lasers. Journal of Applied Physics, 57 (12). 5345-5348 doi:10.1063/1.334853
Gavrilovic, P., Deppe, D. G., Meehan, K., Holonyak, N., Coleman, J. J., Burnham, R. D. (1985) Implantation disordering of AlxGa1−xAs superlattices. Applied Physics Letters, 47 (2). 130-132 doi:10.1063/1.96238
Jackson, G. S., Pan, N., Feng, M. S., Stillman, G. E., Holonyak, N., Burnham, R. D. (1987) Stripe‐geometry AlxGa1−xAs‐GaAs quantum well lasers via hydrogenation. Applied Physics Letters, 51 (20). 1629-1631 doi:10.1063/1.98577
Kaliski, R. W., Gavrilovic, P., Meehan, K., Gavrilovic, J., Hsieh, K. C., Jackson, G. S., Holonyak, N., Coleman, J. J., Burnham, R. D., Thornton, R. L., Paoli, T. L. (1985) Photoluminescence and stimulated emission in Si‐ and Ge‐disordered AlxGa1−xAs‐GaAs superlattices. Journal of Applied Physics, 58 (1). 101-107 doi:10.1063/1.335710
Guido, L. J., Hsieh, K. C., Holonyak, N., Kaliski, R. W., Eu, V., Feng, M., Burnham, R. D. (1987) Impurity induced layer disordering of Si implanted AlxGa1−xAs‐GaAs quantum‐well heterostructures: Layer disordering via diffusion from extrinsic dislocation loops. Journal of Applied Physics, 61 (4). 1329-1334 doi:10.1063/1.338111
Major, J. S., Hall, D. C., Guido, L. J., Holonyak, N., Gavrilovic, P., Meehan, K., Williams, J. E., Stutius, W. (1989) High‐power disorder‐defined coupled stripe AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure lasers. Applied Physics Letters, 55 (3). 271-273 doi:10.1063/1.101926
Meehan, K., Brown, J. M., Gavrilovic, P., Holonyak, N., Burnham, R. D., Paoli, T. L., Streifer, W. (1984) Thermal‐anneal wavelength modification of multiple‐wellp‐nAlxGa1−xAs‐GaAs quantum‐well lasers. Journal of Applied Physics, 55 (7). 2672-2675 doi:10.1063/1.333277
 
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