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Tarucha, Seigo, Okamoto, Hiroshi (1986) Monolithic integration of a laser diode and an optical waveguide modulator having a GaAs/AlGaAs quantum well double heterostructure. Applied Physics Letters, 48 (1). 1-3 doi:10.1063/1.96776

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Reference TypeJournal (article/letter/editorial)
TitleMonolithic integration of a laser diode and an optical waveguide modulator having a GaAs/AlGaAs quantum well double heterostructure
JournalApplied Physics Letters
AuthorsTarucha, SeigoAuthor
Okamoto, HiroshiAuthor
Year1986 (January 6)Volume48
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.96776Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8476988Long-form Identifiermindat:1:5:8476988:8
GUID0
Full ReferenceTarucha, Seigo, Okamoto, Hiroshi (1986) Monolithic integration of a laser diode and an optical waveguide modulator having a GaAs/AlGaAs quantum well double heterostructure. Applied Physics Letters, 48 (1). 1-3 doi:10.1063/1.96776
Plain TextTarucha, Seigo, Okamoto, Hiroshi (1986) Monolithic integration of a laser diode and an optical waveguide modulator having a GaAs/AlGaAs quantum well double heterostructure. Applied Physics Letters, 48 (1). 1-3 doi:10.1063/1.96776
In(1986, January) Applied Physics Letters Vol. 48 (1) AIP Publishing

See Also

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Tarucha, Seigo, Okamoto, Hiroshi (1986) Voltage‐controlled optical bistability associated with two‐dimensional exciton in GaAs‐AlGaAs multiple quantum well lasers. Applied Physics Letters, 49 (10). 543-545 doi:10.1063/1.97614
Tarucha, Seigo, Horikoshi, Yoshiji, Okamoto, Hiroshi (1983) Optical Absorption Characteristics of GaAs-AlGaAs Multi-Quantum-Well Heterostructure Waveguides. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l482
Tarucha, Seigo, Iwamura, Hidetoshi, Saku, Tadashi, Okamoto, Hiroshi (1985) Waveguide-Type Optical Modulator of GaAs Quantum Well Double Heterostructures Using Electric Field Effect on Exciton Absorption. Japanese Journal of Applied Physics, 24. doi:10.1143/jjap.24.l442
Arakawa, Y., Larsson, A., Paslaski, J., Yariv, A. (1986) ActiveQswitching in a GaAs/AlGaAs multiquantum well laser with an intracavity monolithic loss modulator. Applied Physics Letters, 48 (9). 561-563 doi:10.1063/1.96507
Iwamura, Hidetoshi, Tarucha, Seigo, Saku, Tadashi, Horikoshi, Yoshiji, Okamoto, Hiroshi (1983) A Segmented Electrode Multi-Quantum-Well Laser Diode. Japanese Journal of Applied Physics, 22. doi:10.1143/jjap.22.l751
Chen, Ching‐Hui, Lee, Si‐Chen (1991) Monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodetector. Applied Physics Letters, 59 (27). 3592-3594 doi:10.1063/1.105642
Masumoto, Yasuaki, Tarucha, Seigo, Okamoto, Hiroshi (1986) Picosecond spectroscopy of two-dimensional excitons in GaAs- and AlxGa1−xAs-AlAs multi-quantum-well structures. Surface Science Letters, 174 (1). doi:10.1016/0167-2584(86)90049-6
Ribot, H., Lee, K. W., Simes, R. J., Yan, R. H., Coldren, L. A. (1989) Disordering of GaAs/AlGaAs multiple quantum well structures by thermal annealing for monolithic integration of laser and phase modulator. Applied Physics Letters, 55 (7). 672-674 doi:10.1063/1.101818
Wada, O., Sanada, T., Hamaguchi, H., Fujii, T., Sakurai, T. (1983) Monolithic integration of a double heterostructure light‐emitting diode and a field‐effect transistor amplifier using molecular beam grown AlGaAs/GaAs. Applied Physics Letters, 43 (4). 345-347 doi:10.1063/1.94331
Masumoto, Yasuaki, Tarucha, Seigo, Okamoto, Hiroshi (1986) Absorption Saturation of Excitons in GaAs-AlAs Multi-Quantum-Well Structures. Journal of the Physical Society of Japan, 55 (1). 57-60 doi:10.1143/jpsj.55.57
Masumoto, Yasuaki, Tarucha, Seigo, Okamoto, Hiroshi (1986) Picosecond spectroscopy of two-dimensional excitons in GaAs- and AlxGa1−xAs-AlAs multi-quantum-well structures. Surface Science, 174 (1). 283-287 doi:10.1016/0039-6028(86)90422-x
 
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