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Cherng, M. J., Stringfellow, G. B., Kisker, D. W., Srivastava, A. K., Zyskind, J. L. (1986) GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (6). 419-421 doi:10.1063/1.96517

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Reference TypeJournal (article/letter/editorial)
TitleGaInAsSb metastable alloys grown by organometallic vapor phase epitaxy
JournalApplied Physics Letters
AuthorsCherng, M. J.Author
Stringfellow, G. B.Author
Kisker, D. W.Author
Srivastava, A. K.Author
Zyskind, J. L.Author
Year1986 (February 10)Volume48
Issue6
PublisherAIP Publishing
DOIdoi:10.1063/1.96517Search in ResearchGate
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Mindat Ref. ID8478045Long-form Identifiermindat:1:5:8478045:6
GUID0
Full ReferenceCherng, M. J., Stringfellow, G. B., Kisker, D. W., Srivastava, A. K., Zyskind, J. L. (1986) GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (6). 419-421 doi:10.1063/1.96517
Plain TextCherng, M. J., Stringfellow, G. B., Kisker, D. W., Srivastava, A. K., Zyskind, J. L. (1986) GaInAsSb metastable alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (6). 419-421 doi:10.1063/1.96517
In(1986, February) Applied Physics Letters Vol. 48 (6) AIP Publishing

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Jen, H. R., Cherng, M. J., Stringfellow, G. B. (1986) Ordered structures in GaAs0.5Sb0.5alloys grown by organometallic vapor phase epitaxy. Applied Physics Letters, 48 (23). 1603-1605 doi:10.1063/1.96830
Shurtleff, J. K., Jun, S. W., Stringfellow, G. B. (2001) Surfactant effects on doping of GaAs grown by organometallic vapor phase epitaxy. Applied Physics Letters, 78 (20). 3038-3040 doi:10.1063/1.1371790
Huang, K. T., Chiu, C. T., Cohen, R. M., Stringfellow, G. B. (1994) InAsSbBi alloys grown by organometallic vapor‐phase epitaxy. Journal of Applied Physics, 75 (6). 2857-2863 doi:10.1063/1.356179
Cherng, Y. T., Ma, K. Y., Stringfellow, G. B. (1988) Raman scattering in InAs1−xSbxgrown by organometallic vapor phase epitaxy. Applied Physics Letters, 53 (10). 886-887 doi:10.1063/1.100104
Kisker, D. W., Miller, J. N., Stringfellow, G. B. (1982) Oxygen gettering by graphite baffles during organometallic vapor phase epitaxial AlGaAs growth. Applied Physics Letters, 40 (7). 614-616 doi:10.1063/1.93199
Kuo, C. P., Fry, K. L., Stringfellow, G. B. (1985) GaInAs/InP quantum wells grown by organometallic vapor phase epitaxy. Applied Physics Letters, 47 (8). 855-857 doi:10.1063/1.96008
Caneau, C., Srivastava, A. K., Zyskind, J. L., Sulhoff, J. W., Dentai, A. G., Pollack, M. A. (1986) cw operation of GaInAsSb/AlGaAsSb lasers up to 190 K. Applied Physics Letters, 49 (2). 55-57 doi:10.1063/1.97350
Jun, S. W., Fetzer, C. M., Lee, R. T., Shurtleff, J. K., Stringfellow, G. B. (2000) Bi surfactant effects on ordering in GaInP grown by organometallic vapor-phase epitaxy. Applied Physics Letters, 76 (19). 2716-2718 doi:10.1063/1.126453
Jun, S. W., Stringfellow, G. B., Howard, A. D., Fetzer, C. M., Shurtleff, J. K. (2001) Kinetics of Te doping in disodering GaInP grown by organometallic vapor phase epitaxy. Journal of Applied Physics, 90 (12). 6048-6053 doi:10.1063/1.1416857
Srivastava, A. K., DeWinter, J. C., Caneau, C., Pollack, M. A., Zyskind, J. L. (1986) High performance GaInAsSb/GaSb p‐n photodiodes for the 1.8–2.3 μm wavelength range. Applied Physics Letters, 48 (14). 903-904 doi:10.1063/1.96653
Cherng, M. J., Stringfellow, G. G., Cohen, R. M. (1984) Organometallic vapor phase epitaxial growth of GaAs0.5Sb0.5. Applied Physics Letters, 44 (7). 677-679 doi:10.1063/1.94874
 
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